Electronic structure and vertical transport in random dimer GaAs-Al_xGa_(1-x)As superlattices

We report a systematic study of several GaAs-AlxGa1-xAs semiconductor superlattices grown by molecular-beam epitaxy specifically designed to explore the existence of extended states in random dimer superlattices. We have confirmed our previous results [V. Bellani et al., Phys. Rev. Lett. 82, 2159 (1...

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Detalhes bibliográficos
Autores: Parisini, A., Tarricone, L., Bellani, V., Parravicini, G. B., Díaz García, Elena, Domínguez-Adame Acosta, Francisco, Hey, R.
Formato: artículo
Fecha de publicación:2001
País:España
Recursos:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/59352
Acesso em linha:https://hdl.handle.net/20.500.14352/59352
Access Level:acceso abierto
Palavra-chave:538.9
Disordered Semiconductor Superlattices
Distributed Layer Thicknesses
Gaas/Alas Superlattices
Bloch Oscillations
Photoluminescence Properties
Photocurrent Spectroscopy
Correlated Disorder
Optical-Absorption
Dc Conductance
Quantum Wells
Física de materiales
Descrição
Resumo:We report a systematic study of several GaAs-AlxGa1-xAs semiconductor superlattices grown by molecular-beam epitaxy specifically designed to explore the existence of extended states in random dimer superlattices. We have confirmed our previous results [V. Bellani et al., Phys. Rev. Lett. 82, 2159 (1999)] with much additional evidence that allows us to lay claim to a clear-cut experimental verification of the presence of extended states in random dimer superlattices due to the short-range correlations (dimers) that inhibit the localization effects of the disorder.

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