Electric field effects in Fibonacci superlattices
We present a thorough study of transmission and localization properties of Fibonacci superlattices, both in flat band conditions and subject to homogeneous electric fields perpendicular to the layers. We use the transfer matrix formalism to determine the transmission coefficient and the degree of lo...
| Autores: | , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1997 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/59368 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/59368 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Semiconductor Superlattice Bloch Oscillations Gaas Física de materiales |
| Sumario: | We present a thorough study of transmission and localization properties of Fibonacci superlattices, both in flat band conditions and subject to homogeneous electric fields perpendicular to the layers. We use the transfer matrix formalism to determine the transmission coefficient and the degree of localization of the electronic states. We find that the fragmentation pattern of the electronic spectrum is strongly modified when the electric field is switched on, this effect being more noticeable as the system length increases. We relate those phenomena to field-induced localization of carriers in Fibonacci superlattices. |
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