Data for the publication "Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices"

New approaches such as selective area growth, where crystal growth is lithographically controlled, allow the integration of bottom-up grown semiconductor nanomaterials in large-scale classical and quantum nanoelectronics. This calls for assessment and optimization of the reproducibility between indi...

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Detalhes bibliográficos
Autores: Olšteins, Dāgs, Nagda, Gunjan, Carrad, Damon J., Beznasyuk, Daria V., Petersen, Christian Emanuel N., Martí-Sànchez, Sara, Arbiol, Jordi, Jespersen, Thomas Sand
Formato: conjunto de datos
Fecha de publicación:2024
País:España
Recursos:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/384554
Acesso em linha:http://hdl.handle.net/10261/384554
Access Level:acceso abierto
Palavra-chave:Nanowires
Selective area growth
Multiplexer
Statistics
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spelling Data for the publication "Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices"Olšteins, DāgsNagda, GunjanCarrad, Damon J.Beznasyuk, Daria V.Petersen, Christian Emanuel N.Martí-Sànchez, SaraArbiol, JordiJespersen, Thomas SandNanowiresSelective area growthMultiplexerStatisticsNew approaches such as selective area growth, where crystal growth is lithographically controlled, allow the integration of bottom-up grown semiconductor nanomaterials in large-scale classical and quantum nanoelectronics. This calls for assessment and optimization of the reproducibility between individual components. We quantify the structural and electronic statistical reproducibility within large arrays of nominally identical selective area growth InAs nanowires. The distribution of structural parameters is acquired through comprehensive atomic force microscopy studies and transmission electron microscopy. These are compared to the statistical distributions of the cryogenic electrical properties of $256$ individual SAG nanowire field effect transistors addressed using cryogenic multiplexer circuits. Correlating measurements between successive thermal cycles allows distinguishing between the contributions of surface impurity scattering and fixed structural properties to device reproducibility. The results confirm the potential of SAG nanomaterials, and the methodologies for quantifying statistical metrics are essential for further optimization of reproducibility. The .zip file contains the AFM and electrical transport data that was used to support the findings in the associated publication. The AFM data is available in .asc format and can be opened with FOSS software such as Gwyddion or read via python. The transport data is arranged into python dictionaries for easy navigation. A jupyter notebook is included describing the dictionary structure and providing example code for accessing the data. -- Methods, materials and software: AFM, InAs, Gwyddion, pythonPeer reviewedTechnical University of DenmarkOlšteins, Dāgs [0000-0002-2946-7531]Carrad, Damon J. [0000-0003-0372-8593]Arbiol, Jordi [0000-0002-0695-1726]Jespersen, Thomas Sand [0000-0002-7879-976X]Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202520252024info:eu-repo/semantics/datasethttp://purl.org/coar/resource_type/c_ddb1application/ziphttp://hdl.handle.net/10261/384554reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)InglésOlšteins, Dāgs; Nagda, Gunjan; Carrad, Damon J.; Beznasyuk, Daria V.; Petersen, Christian Emanuel N.; Martí-Sànchez, Sara; Arbiol, Jordi; Jespersen, Thomas Sand. Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices; American Chemical Society; https://doi.org/10.1021/acs.nanolett.4c01038. http://hdl.handle.net/10261/381260Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/3845542026-05-22T06:33:51Z
dc.title.none.fl_str_mv Data for the publication "Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices"
title Data for the publication "Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices"
spellingShingle Data for the publication "Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices"
Olšteins, Dāgs
Nanowires
Selective area growth
Multiplexer
Statistics
title_short Data for the publication "Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices"
title_full Data for the publication "Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices"
title_fullStr Data for the publication "Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices"
title_full_unstemmed Data for the publication "Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices"
title_sort Data for the publication "Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices"
dc.creator.none.fl_str_mv Olšteins, Dāgs
Nagda, Gunjan
Carrad, Damon J.
Beznasyuk, Daria V.
Petersen, Christian Emanuel N.
Martí-Sànchez, Sara
Arbiol, Jordi
Jespersen, Thomas Sand
author Olšteins, Dāgs
author_facet Olšteins, Dāgs
Nagda, Gunjan
Carrad, Damon J.
Beznasyuk, Daria V.
Petersen, Christian Emanuel N.
Martí-Sànchez, Sara
Arbiol, Jordi
Jespersen, Thomas Sand
author_role author
author2 Nagda, Gunjan
Carrad, Damon J.
Beznasyuk, Daria V.
Petersen, Christian Emanuel N.
Martí-Sànchez, Sara
Arbiol, Jordi
Jespersen, Thomas Sand
author2_role author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Olšteins, Dāgs [0000-0002-2946-7531]
Carrad, Damon J. [0000-0003-0372-8593]
Arbiol, Jordi [0000-0002-0695-1726]
Jespersen, Thomas Sand [0000-0002-7879-976X]
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Nanowires
Selective area growth
Multiplexer
Statistics
topic Nanowires
Selective area growth
Multiplexer
Statistics
description New approaches such as selective area growth, where crystal growth is lithographically controlled, allow the integration of bottom-up grown semiconductor nanomaterials in large-scale classical and quantum nanoelectronics. This calls for assessment and optimization of the reproducibility between individual components. We quantify the structural and electronic statistical reproducibility within large arrays of nominally identical selective area growth InAs nanowires. The distribution of structural parameters is acquired through comprehensive atomic force microscopy studies and transmission electron microscopy. These are compared to the statistical distributions of the cryogenic electrical properties of $256$ individual SAG nanowire field effect transistors addressed using cryogenic multiplexer circuits. Correlating measurements between successive thermal cycles allows distinguishing between the contributions of surface impurity scattering and fixed structural properties to device reproducibility. The results confirm the potential of SAG nanomaterials, and the methodologies for quantifying statistical metrics are essential for further optimization of reproducibility. The .zip file contains the AFM and electrical transport data that was used to support the findings in the associated publication. The AFM data is available in .asc format and can be opened with FOSS software such as Gwyddion or read via python. The transport data is arranged into python dictionaries for easy navigation. A jupyter notebook is included describing the dictionary structure and providing example code for accessing the data. -- Methods, materials and software: AFM, InAs, Gwyddion, python
publishDate 2024
dc.date.none.fl_str_mv 2024
2025
2025
dc.type.none.fl_str_mv info:eu-repo/semantics/dataset
http://purl.org/coar/resource_type/c_ddb1
format dataset
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/384554
url http://hdl.handle.net/10261/384554
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Olšteins, Dāgs; Nagda, Gunjan; Carrad, Damon J.; Beznasyuk, Daria V.; Petersen, Christian Emanuel N.; Martí-Sànchez, Sara; Arbiol, Jordi; Jespersen, Thomas Sand. Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices; American Chemical Society; https://doi.org/10.1021/acs.nanolett.4c01038. http://hdl.handle.net/10261/381260
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/zip
dc.publisher.none.fl_str_mv Technical University of Denmark
publisher.none.fl_str_mv Technical University of Denmark
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.81155

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