Physics-based compact model of HEMTs for circuit simulation
This thesis targets the modeling of III-V HEMTs devices. A physics-based compact modeling of AlGaN/GaN HEMTs for circuit simulation is presented. A complete modeling of drain current, gate charge and gate capacitances is developed. The core drain current and gate charge models are derived using a si...
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| Tipo de recurso: | tesis doctoral |
| Estado: | Versión publicada |
| Fecha de publicación: | 2014 |
| País: | España |
| Institución: | Universitat Rovira i virgili (URV) |
| Repositorio: | Repositori Institucional de la Universitat Rovira i Virgili |
| OAI Identifier: | oai:urv.cat:TDX:1966 |
| Acceso en línea: | https://hdl.handle.net/20.500.11797/TDX1966 http://hdl.handle.net/10803/293908 |
| Access Level: | acceso abierto |
| Palabra clave: | 621.3 - Enginyeria elèctrica. Electrotècnia. Telecomunicacions 62 - Enginyeria. Tecnologia 537 - Electricitat. Magnetisme. Electromagnetisme |
| Sumario: | This thesis targets the modeling of III-V HEMTs devices. A physics-based compact modeling of AlGaN/GaN HEMTs for circuit simulation is presented. A complete modeling of drain current, gate charge and gate capacitances is developed. The core drain current and gate charge models are derived using a simple charge control model developed from the solutions of Poisson's equation and Schrödinger’s equation solved for the active operating area of the device. The models are simple continuous and applicable for the whole operating regime of the device. A separate model is also presented for the current collapse effect, which is a serious issue in AlGaN/GaN HEMT. The current collapse model is developed using the core current model as a framework which resulted in a robust large signal model that can be used with and without the presence of current collapse. In addition, nonlinearity analysis and modeling of commercial AlGaAs/GaAs pHEMTs using the Volterra series is also presented. |
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