Nanometer-scale electrical characterization of stressed ultrathin SiO2 films using conducting atomic force microscopy
A conductive atomic force microscope has been used to electrically stress and to investigate the effects of degradation in the conduction properties of ultrathin (<6 nm) SiO2 films on a nanometer scale (areas of ≈100 nm2). Before oxide breakdown, switching between two states of well-defined condu...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2001 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:116266 |
| Acceso en línea: | https://ddd.uab.cat/record/116266 https://dx.doi.org/urn:doi:10.1063/1.1382624 |
| Access Level: | acceso abierto |
| Palabra clave: | Atomic force microscopes Atomic force microscopy Electrical properties Thin films |
| Sumario: | A conductive atomic force microscope has been used to electrically stress and to investigate the effects of degradation in the conduction properties of ultrathin (<6 nm) SiO2 films on a nanometer scale (areas of ≈100 nm2). Before oxide breakdown, switching between two states of well-defined conductivity and sudden changes of conductivity were observed, which are attributed to the capture/release of single charges in the defects generated during stress. |
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