Combined laser and atomic force microscope lithography on aluminum
A direct-write laser system and an atomic force microscope(AFM) are combined to modify thin layers of aluminum on an oxidizedsilicon substrate, in order to fabricate conducting and robust etch masks with submicron features. These masks are very well suited for the production of nanoelectromechanical...
| Autores: | , , , , |
|---|---|
| Tipo de recurso: | artículo |
| Fecha de publicación: | 1999 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:116281 |
| Acceso en línea: | https://ddd.uab.cat/record/116281 https://dx.doi.org/urn:doi:10.1063/1.124106 |
| Access Level: | acceso abierto |
| Palabra clave: | Nanoelectromechanical systems Oxidation Atomic force microscopes Etching Nanofabrication Aluminium Atomic force microscopy Laser photolithography Microlithography Silicon |
| Sumario: | A direct-write laser system and an atomic force microscope(AFM) are combined to modify thin layers of aluminum on an oxidizedsilicon substrate, in order to fabricate conducting and robust etch masks with submicron features. These masks are very well suited for the production of nanoelectromechanical systems(NEMS) by reactive ion etching. In particular, the laser-modified areas can be subsequently locally oxidized by AFM and the oxidized regions can be selectively removed by chemical etching. This provides a straightforward means to define the overall conducting structure of a device by laser writing, and to perform submicron modifications by AFMoxidation. The mask fabrication for a nanoscale suspended resonator bridge is used to illustrate the advantages of this combined technique for NEMS. |
|---|