Breakdown-induced negative charge in ultrathin SiO2 films measured by atomic force microscopy
Atomic-force-microscopy-based techniques have been used to investigate at a nanometer scale the dielectric breakdown (BD) of ultrathin (<6 nm) SiO2films of metal-oxide-semiconductordevices. The results show that BD leads to negative charge at the BD location and the amount of created charge has b...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2002 |
| País: | España |
| Institución: | Universitat Autònoma de Barcelona |
| Repositorio: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglés |
| OAI Identifier: | oai:ddd.uab.cat:116259 |
| Acceso en línea: | https://ddd.uab.cat/record/116259 https://dx.doi.org/urn:doi:10.1063/1.1519357 |
| Access Level: | acceso abierto |
| Palabra clave: | Charged currents Thin film devices Atomic force microscopy Dielectric breakdown Dielectric devices Dielectric thin films Metal insulator semiconductor structures Metallic thin films Physics demonstrations Thin films |
| Sumario: | Atomic-force-microscopy-based techniques have been used to investigate at a nanometer scale the dielectric breakdown (BD) of ultrathin (<6 nm) SiO2films of metal-oxide-semiconductordevices. The results show that BD leads to negative charge at the BD location and the amount of created charge has been estimated. Moreover, the comparison of the charge magnitude generated during current-limited stresses and stresses without current limit demonstrates that the observed BD induced negative charge is related to the structural damage created by the oxide BD. |
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