Cathodoluminescence enhancement in porous silicon cracked in vacuum

An increase of the cathodoluminescence (CL) signal of porous silicon (PS) cracked in vacuum of up to three orders of magnitude has been achieved. Under high electron-beam currents, the samples cracked in interconnected pieces of tens of microns, exposing new surfaces to the electron beam. This treat...

Descripción completa

Detalles Bibliográficos
Autores: Rams, J., Méndez Martín, María Bianchi, Craciun, G., Plugaru, R., Piqueras De Noriega, Francisco Javier
Tipo de recurso: artículo
Fecha de publicación:1999
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/58944
Acceso en línea:https://hdl.handle.net/20.500.14352/58944
Access Level:acceso abierto
Palabra clave:538.9
Electron-Beam Irradiation
Luminescence Properties
Photoluminescence
Microscopy
States
Si
Física de materiales
id ES_163cfef4ce0fec8011992eacedecefd2
oai_identifier_str oai:docta.ucm.es:20.500.14352/58944
network_acronym_str ES
network_name_str España
repository_id_str
spelling Cathodoluminescence enhancement in porous silicon cracked in vacuumRams, J.Méndez Martín, María BianchiCraciun, G.Plugaru, R.Piqueras De Noriega, Francisco Javier538.9Electron-Beam IrradiationLuminescence PropertiesPhotoluminescenceMicroscopyStatesSiFísica de materialesAn increase of the cathodoluminescence (CL) signal of porous silicon (PS) cracked in vacuum of up to three orders of magnitude has been achieved. Under high electron-beam currents, the samples cracked in interconnected pieces of tens of microns, exposing new surfaces to the electron beam. This treatment enhances the radiative intensity in PS associated with a broadband peaked at 720 nm, which is highly stable while the sample is kept in vacuum. Cross-sectional CL observations show that most of the light is generated in the top surface of the porous layer. The spectral depth dependence of the emitted light reveals a relatively weak blue emission in the region closer to the substrate.Amer Inst PhysicsUniversidad Complutense de Madrid19991999-03-2219991999-03-22journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/58944reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/589442026-06-02T12:44:21Z
dc.title.none.fl_str_mv Cathodoluminescence enhancement in porous silicon cracked in vacuum
title Cathodoluminescence enhancement in porous silicon cracked in vacuum
spellingShingle Cathodoluminescence enhancement in porous silicon cracked in vacuum
Rams, J.
538.9
Electron-Beam Irradiation
Luminescence Properties
Photoluminescence
Microscopy
States
Si
Física de materiales
title_short Cathodoluminescence enhancement in porous silicon cracked in vacuum
title_full Cathodoluminescence enhancement in porous silicon cracked in vacuum
title_fullStr Cathodoluminescence enhancement in porous silicon cracked in vacuum
title_full_unstemmed Cathodoluminescence enhancement in porous silicon cracked in vacuum
title_sort Cathodoluminescence enhancement in porous silicon cracked in vacuum
dc.creator.none.fl_str_mv Rams, J.
Méndez Martín, María Bianchi
Craciun, G.
Plugaru, R.
Piqueras De Noriega, Francisco Javier
author Rams, J.
author_facet Rams, J.
Méndez Martín, María Bianchi
Craciun, G.
Plugaru, R.
Piqueras De Noriega, Francisco Javier
author_role author
author2 Méndez Martín, María Bianchi
Craciun, G.
Plugaru, R.
Piqueras De Noriega, Francisco Javier
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 538.9
Electron-Beam Irradiation
Luminescence Properties
Photoluminescence
Microscopy
States
Si
Física de materiales
topic 538.9
Electron-Beam Irradiation
Luminescence Properties
Photoluminescence
Microscopy
States
Si
Física de materiales
description An increase of the cathodoluminescence (CL) signal of porous silicon (PS) cracked in vacuum of up to three orders of magnitude has been achieved. Under high electron-beam currents, the samples cracked in interconnected pieces of tens of microns, exposing new surfaces to the electron beam. This treatment enhances the radiative intensity in PS associated with a broadband peaked at 720 nm, which is highly stable while the sample is kept in vacuum. Cross-sectional CL observations show that most of the light is generated in the top surface of the porous layer. The spectral depth dependence of the emitted light reveals a relatively weak blue emission in the region closer to the substrate.
publishDate 1999
dc.date.none.fl_str_mv 1999
1999-03-22
1999
1999-03-22
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/58944
url https://hdl.handle.net/20.500.14352/58944
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Amer Inst Physics
publisher.none.fl_str_mv Amer Inst Physics
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869403844195123200
score 15,300719

Similares en LA Referencia