A Method for the Determination of a Distributed FET Noise-Model Based on Matched-Source Noise-Figure Measurements
A new method for the determination of a distributed FET noise model is presented. It is based on the extraction of the intrinsic noise-correlation matrix of an elemental section of the device from the device's noise figure, measured for only one source-impedance state at a number of frequency p...
| Autores: | , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2004 |
| País: | España |
| Institución: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/1110 |
| Acceso en línea: | https://hdl.handle.net/2117/1110 |
| Access Level: | acceso abierto |
| Palabra clave: | Radio wave propagation Noise Measurement Impedance (Electricity) Measurement. Field-effect transistors noise-parameters measurement FET noise parameters distributed FET noise model intrinsic noise-correlation matrix noise modeling electric impedance field effect transistors noise measurement semiconductor device noise matched-source noise-figure measurement source-impedance state Propagació d'ones Soroll -- Mesurament Transistors d'efecte de camp Impedància (Electricitat) Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica::Circuits de microones, radiofreqüència i ones mil·limètriques |
| Sumario: | A new method for the determination of a distributed FET noise model is presented. It is based on the extraction of the intrinsic noise-correlation matrix of an elemental section of the device from the device's noise figure, measured for only one source-impedance state at a number of frequency points. Experimental results up to 40 GHz are given. |
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