Bias-dependence of FET intrinsic noise sources, determined with a quasi-2D model
The bias-dependence of microwave-FET intrinsic noise sources in their hybrid configuration is theoretically determined, using a new quasi-2D (Q-2D) physical model based on Thornber's current equation [8]. It is shown that the correlation coefficient cannot be neglected, in agreement with empiri...
| Autores: | , , |
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| Formato: | artículo |
| Fecha de publicación: | 2003 |
| País: | España |
| Recursos: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/1106 |
| Acesso em linha: | https://hdl.handle.net/2117/1106 |
| Access Level: | acceso abierto |
| Palavra-chave: | Microwave optics Noise Measurement Field-effect transistors equivalent circuits microwave field effect transistors high electron mobility transistors Schottky gate field effect transistors semiconductor device models semiconductor device noise bias-dependence microwave-FET intrinsic noise sources hybrid configuration quasi-2D physical model Thornber current equation noise-parameter measurements FET noise models Soroll -- Mesurament Òptica física Microones Transistors d'efecte de camp Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica::Circuits de microones, radiofreqüència i ones mil·limètriques |
| Resumo: | The bias-dependence of microwave-FET intrinsic noise sources in their hybrid configuration is theoretically determined, using a new quasi-2D (Q-2D) physical model based on Thornber's current equation [8]. It is shown that the correlation coefficient cannot be neglected, in agreement with empirical work in the literature. Experimental verification using noise-parameter measurements up to 26 GHz is presented. |
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