Importance of growth method and substrate-induced crystalline quality in Al/Gd0.2Ca0.8MnO3/Au memristor devices

[EN]We report on the impact of the growth method and substrate-induced crystalline quality on the performance of planar Al/Gd0.2Ca0.8MnO3/Au memristor devices. Structural, magnetic, and resistive properties were thoroughly examined for fundamental characterizations, with a particular emphasis on the...

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Autores: Angervo, Ilari, Antola, Anni, Vaimala, T., Malmi, A., Schulman, Alejandro, Huhtinen, Hannu, Paturi, Petriina
Tipo de recurso: artículo
Estado:Versión enviada para evaluación y publicación
Fecha de publicación:2024
País:España
Institución:Universidad de Salamanca (USAL)
Repositorio:GREDOS. Repositorio Institucional de la Universidad de Salamanca
OAI Identifier:oai:gredos.usal.es:10366/159310
Acceso en línea:http://hdl.handle.net/10366/159310
Access Level:acceso abierto
Palabra clave:Memristors
Manganite
Neuromorphic computing
Perovskites
Pulsed laser deposition
Thin film devices
2203.02 Elementos de Circuitos
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spelling Importance of growth method and substrate-induced crystalline quality in Al/Gd0.2Ca0.8MnO3/Au memristor devicesAngervo, IlariAntola, AnniVaimala, T.Malmi, A.Schulman, AlejandroHuhtinen, HannuPaturi, PetriinaMemristorsManganiteNeuromorphic computingPerovskitesPulsed laser depositionThin film devices2203.02 Elementos de Circuitos[EN]We report on the impact of the growth method and substrate-induced crystalline quality on the performance of planar Al/Gd0.2Ca0.8MnO3/Au memristor devices. Structural, magnetic, and resistive properties were thoroughly examined for fundamental characterizations, with a particular emphasis on their correlation with the memristive properties of fabricated devices. Our findings suggest that memristor structures grown on single crystal SrTiO3 substrates using pulsed laser deposition consistently exhibit superior crystalline quality compared to those fabricated using chemical solution deposition and on silicon-based substrates. Despite variations in growth method and substrate, all memristor structures display typical resistive switching behaviour, distinguishing between high-resistance and lowresistance states. However, endurance and retention measurements demonstrate that memristor structures produced via pulsed laser deposition on single crystalline SrTiO3 demonstrate the most favourable resistive switching properties. To elucidate the mechanisms underlying the differences in resistive switching behavior across substrates and deposition methods, we extensively discuss these issues in the context of structural distortion and conduction mechanismsIOP Press202420242024info:eu-repo/semantics/articleinfo:eu-repo/semantics/submittedVersionapplication/pdfhttp://hdl.handle.net/10366/159310reponame:GREDOS. Repositorio Institucional de la Universidad de Salamancainstname:Universidad de Salamanca (USAL)InglésAttribution-NonCommercial-NoDerivatives 4.0 Internacionalhttp://creativecommons.org/licenses/by-nc-nd/4.0/info:eu-repo/semantics/openAccessoai:gredos.usal.es:10366/1593102026-06-07T06:28:51Z
dc.title.none.fl_str_mv Importance of growth method and substrate-induced crystalline quality in Al/Gd0.2Ca0.8MnO3/Au memristor devices
title Importance of growth method and substrate-induced crystalline quality in Al/Gd0.2Ca0.8MnO3/Au memristor devices
spellingShingle Importance of growth method and substrate-induced crystalline quality in Al/Gd0.2Ca0.8MnO3/Au memristor devices
Angervo, Ilari
Memristors
Manganite
Neuromorphic computing
Perovskites
Pulsed laser deposition
Thin film devices
2203.02 Elementos de Circuitos
title_short Importance of growth method and substrate-induced crystalline quality in Al/Gd0.2Ca0.8MnO3/Au memristor devices
title_full Importance of growth method and substrate-induced crystalline quality in Al/Gd0.2Ca0.8MnO3/Au memristor devices
title_fullStr Importance of growth method and substrate-induced crystalline quality in Al/Gd0.2Ca0.8MnO3/Au memristor devices
title_full_unstemmed Importance of growth method and substrate-induced crystalline quality in Al/Gd0.2Ca0.8MnO3/Au memristor devices
title_sort Importance of growth method and substrate-induced crystalline quality in Al/Gd0.2Ca0.8MnO3/Au memristor devices
dc.creator.none.fl_str_mv Angervo, Ilari
Antola, Anni
Vaimala, T.
Malmi, A.
Schulman, Alejandro
Huhtinen, Hannu
Paturi, Petriina
author Angervo, Ilari
author_facet Angervo, Ilari
Antola, Anni
Vaimala, T.
Malmi, A.
Schulman, Alejandro
Huhtinen, Hannu
Paturi, Petriina
author_role author
author2 Antola, Anni
Vaimala, T.
Malmi, A.
Schulman, Alejandro
Huhtinen, Hannu
Paturi, Petriina
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv Memristors
Manganite
Neuromorphic computing
Perovskites
Pulsed laser deposition
Thin film devices
2203.02 Elementos de Circuitos
topic Memristors
Manganite
Neuromorphic computing
Perovskites
Pulsed laser deposition
Thin film devices
2203.02 Elementos de Circuitos
description [EN]We report on the impact of the growth method and substrate-induced crystalline quality on the performance of planar Al/Gd0.2Ca0.8MnO3/Au memristor devices. Structural, magnetic, and resistive properties were thoroughly examined for fundamental characterizations, with a particular emphasis on their correlation with the memristive properties of fabricated devices. Our findings suggest that memristor structures grown on single crystal SrTiO3 substrates using pulsed laser deposition consistently exhibit superior crystalline quality compared to those fabricated using chemical solution deposition and on silicon-based substrates. Despite variations in growth method and substrate, all memristor structures display typical resistive switching behaviour, distinguishing between high-resistance and lowresistance states. However, endurance and retention measurements demonstrate that memristor structures produced via pulsed laser deposition on single crystalline SrTiO3 demonstrate the most favourable resistive switching properties. To elucidate the mechanisms underlying the differences in resistive switching behavior across substrates and deposition methods, we extensively discuss these issues in the context of structural distortion and conduction mechanisms
publishDate 2024
dc.date.none.fl_str_mv 2024
2024
2024
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/submittedVersion
format article
status_str submittedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10366/159310
url http://hdl.handle.net/10366/159310
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.rights.none.fl_str_mv Attribution-NonCommercial-NoDerivatives 4.0 Internacional
http://creativecommons.org/licenses/by-nc-nd/4.0/
info:eu-repo/semantics/openAccess
rights_invalid_str_mv Attribution-NonCommercial-NoDerivatives 4.0 Internacional
http://creativecommons.org/licenses/by-nc-nd/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv IOP Press
publisher.none.fl_str_mv IOP Press
dc.source.none.fl_str_mv reponame:GREDOS. Repositorio Institucional de la Universidad de Salamanca
instname:Universidad de Salamanca (USAL)
instname_str Universidad de Salamanca (USAL)
reponame_str GREDOS. Repositorio Institucional de la Universidad de Salamanca
collection GREDOS. Repositorio Institucional de la Universidad de Salamanca
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.811543

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