Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors

We have verified the accuracy of free-charge determinations from Raman scattering in doped semiconductors by comparing the results obtained from phonon-plasmon coupled-mode line-shape fits with the charge-density values extracted from the analysis of the Shubnikov-de Haas oscillations. The experimen...

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Detalles Bibliográficos
Autores: González Díaz, Germán, Artús, L., Blanco, N., Cuscó, R., Ibáñez, J., Long, A.R., Rahman, M.
Tipo de recurso: artículo
Fecha de publicación:2000
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/59343
Acceso en línea:https://hdl.handle.net/20.500.14352/59343
Access Level:acceso abierto
Palabra clave:537
P-Type GaAs
Carrier Concentration
Plasmon Modes
Phonon Modes
InP
Spectra.
Electricidad
Electrónica (Física)
2202.03 Electricidad
id ES_0cb41e4ff31b08c15bd7fb034c9d7bcc
oai_identifier_str oai:docta.ucm.es:20.500.14352/59343
network_acronym_str ES
network_name_str España
repository_id_str
spelling Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductorsGonzález Díaz, GermánArtús, L.Blanco, N.Cuscó, R.Ibáñez, J.Long, A.R.Rahman, M.537P-Type GaAsCarrier ConcentrationPlasmon ModesPhonon ModesInPSpectra.ElectricidadElectrónica (Física)2202.03 ElectricidadWe have verified the accuracy of free-charge determinations from Raman scattering in doped semiconductors by comparing the results obtained from phonon-plasmon coupled-mode line-shape fits with the charge-density values extracted from the analysis of the Shubnikov-de Haas oscillations. The experiments were carried out on n-InP layers, and conduction band nonparabolicity was included both in the Lindhard-Mermin model used to fit the Raman spectra and in the Shubnikov-de Haas analysis. We find a very good agreement between Raman and magnetotransport results, which confirms the reliability of the charge-density determination from Raman-scattering measurements when the line-shape analysis is carried out using the Lindhard-Mermin model.American Institute of PhysicsUniversidad Complutense de Madrid20002000-12-0120002000-12-01journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/59343reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/593432026-06-02T12:44:21Z
dc.title.none.fl_str_mv Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors
title Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors
spellingShingle Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors
González Díaz, Germán
537
P-Type GaAs
Carrier Concentration
Plasmon Modes
Phonon Modes
InP
Spectra.
Electricidad
Electrónica (Física)
2202.03 Electricidad
title_short Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors
title_full Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors
title_fullStr Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors
title_full_unstemmed Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors
title_sort Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors
dc.creator.none.fl_str_mv González Díaz, Germán
Artús, L.
Blanco, N.
Cuscó, R.
Ibáñez, J.
Long, A.R.
Rahman, M.
author González Díaz, Germán
author_facet González Díaz, Germán
Artús, L.
Blanco, N.
Cuscó, R.
Ibáñez, J.
Long, A.R.
Rahman, M.
author_role author
author2 Artús, L.
Blanco, N.
Cuscó, R.
Ibáñez, J.
Long, A.R.
Rahman, M.
author2_role author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 537
P-Type GaAs
Carrier Concentration
Plasmon Modes
Phonon Modes
InP
Spectra.
Electricidad
Electrónica (Física)
2202.03 Electricidad
topic 537
P-Type GaAs
Carrier Concentration
Plasmon Modes
Phonon Modes
InP
Spectra.
Electricidad
Electrónica (Física)
2202.03 Electricidad
description We have verified the accuracy of free-charge determinations from Raman scattering in doped semiconductors by comparing the results obtained from phonon-plasmon coupled-mode line-shape fits with the charge-density values extracted from the analysis of the Shubnikov-de Haas oscillations. The experiments were carried out on n-InP layers, and conduction band nonparabolicity was included both in the Lindhard-Mermin model used to fit the Raman spectra and in the Shubnikov-de Haas analysis. We find a very good agreement between Raman and magnetotransport results, which confirms the reliability of the charge-density determination from Raman-scattering measurements when the line-shape analysis is carried out using the Lindhard-Mermin model.
publishDate 2000
dc.date.none.fl_str_mv 2000
2000-12-01
2000
2000-12-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/59343
url https://hdl.handle.net/20.500.14352/59343
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869403299174678528
score 15,300724

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