Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors
We have verified the accuracy of free-charge determinations from Raman scattering in doped semiconductors by comparing the results obtained from phonon-plasmon coupled-mode line-shape fits with the charge-density values extracted from the analysis of the Shubnikov-de Haas oscillations. The experimen...
| Autores: | , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2000 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/59343 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/59343 |
| Access Level: | acceso abierto |
| Palabra clave: | 537 P-Type GaAs Carrier Concentration Plasmon Modes Phonon Modes InP Spectra. Electricidad Electrónica (Física) 2202.03 Electricidad |
| Sumario: | We have verified the accuracy of free-charge determinations from Raman scattering in doped semiconductors by comparing the results obtained from phonon-plasmon coupled-mode line-shape fits with the charge-density values extracted from the analysis of the Shubnikov-de Haas oscillations. The experiments were carried out on n-InP layers, and conduction band nonparabolicity was included both in the Lindhard-Mermin model used to fit the Raman spectra and in the Shubnikov-de Haas analysis. We find a very good agreement between Raman and magnetotransport results, which confirms the reliability of the charge-density determination from Raman-scattering measurements when the line-shape analysis is carried out using the Lindhard-Mermin model. |
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