Improvement of InAs quantum dots optical properties in close proximity to GaAs(0 0 1) substrate surface

5 páginas, 4 figuras.-- PACS codes: 78.67.Hc; 81.05.Ea; 81.07.Ta; 81.15.Hi; 81.16.Dn

Detalles Bibliográficos
Autores: Martín-Sánchez, Javier, González Díez, Yolanda, Alonso-González, Pablo, González Sotos, Luisa
Tipo de recurso: artículo
Fecha de publicación:2008
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/33722
Acceso en línea:http://hdl.handle.net/10261/33722
Access Level:acceso abierto
Palabra clave:A1. Interfaces
A1. Nanostructures
A3. Molecular beam epitaxy
B2. Semiconducting III–V materials
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spelling Improvement of InAs quantum dots optical properties in close proximity to GaAs(0 0 1) substrate surfaceMartín-Sánchez, JavierGonzález Díez, YolandaAlonso-González, PabloGonzález Sotos, LuisaA1. InterfacesA1. NanostructuresA3. Molecular beam epitaxyB2. Semiconducting III–V materials5 páginas, 4 figuras.-- PACS codes: 78.67.Hc; 81.05.Ea; 81.07.Ta; 81.15.Hi; 81.16.DnIn this work we demonstrate a growth process for obtaining high optical emission efficiency InAs/GaAs(0 0 1) quantum dots (QD) formed at short distance to the interface with the GaAs substrate. In particular, after an initial exposure of the substrate surface to long times of atomic hydrogen flux (tH up to 45 min) followed by a posterior growth of a GaAs buffer layer by atomic layer molecular beam epitaxy, both steps at low substrate temperature (TS=450 °C), an enhancement of InAs QD optical emission efficiency is obtained, even at close proximity (3.5 nm) to the substrate interface. This process fulfils the strict requirements in terms of substrate temperature and buffer layer thickness (distance from the QD to the substrate interface) for its possible use as an optimal regrowth protocol on previously patterned GaAs substrates.This work was financed by Spanish MEC(TEC2005-05781-C03- 01,NAN2004-09109-C04-01,Consolider-Ingenio 2010CSD2006- 00019),CAM (S 0505ESP0200)and by the SANDIE Network of excellence(Contract no. NMP4-CT-2004-500101 group TEP-0120). JMS and PAG thank the I3Pprogram.Peer reviewedElsevier201120112008info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501http://hdl.handle.net/10261/33722reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Ingléshttp://dx.doi.org/10.1016/j.jcrysgro.2008.08.041info:eu-repo/semantics/openAccessoai:digital.csic.es:10261/337222026-05-22T06:33:51Z
dc.title.none.fl_str_mv Improvement of InAs quantum dots optical properties in close proximity to GaAs(0 0 1) substrate surface
title Improvement of InAs quantum dots optical properties in close proximity to GaAs(0 0 1) substrate surface
spellingShingle Improvement of InAs quantum dots optical properties in close proximity to GaAs(0 0 1) substrate surface
Martín-Sánchez, Javier
A1. Interfaces
A1. Nanostructures
A3. Molecular beam epitaxy
B2. Semiconducting III–V materials
title_short Improvement of InAs quantum dots optical properties in close proximity to GaAs(0 0 1) substrate surface
title_full Improvement of InAs quantum dots optical properties in close proximity to GaAs(0 0 1) substrate surface
title_fullStr Improvement of InAs quantum dots optical properties in close proximity to GaAs(0 0 1) substrate surface
title_full_unstemmed Improvement of InAs quantum dots optical properties in close proximity to GaAs(0 0 1) substrate surface
title_sort Improvement of InAs quantum dots optical properties in close proximity to GaAs(0 0 1) substrate surface
dc.creator.none.fl_str_mv Martín-Sánchez, Javier
González Díez, Yolanda
Alonso-González, Pablo
González Sotos, Luisa
author Martín-Sánchez, Javier
author_facet Martín-Sánchez, Javier
González Díez, Yolanda
Alonso-González, Pablo
González Sotos, Luisa
author_role author
author2 González Díez, Yolanda
Alonso-González, Pablo
González Sotos, Luisa
author2_role author
author
author
dc.subject.none.fl_str_mv A1. Interfaces
A1. Nanostructures
A3. Molecular beam epitaxy
B2. Semiconducting III–V materials
topic A1. Interfaces
A1. Nanostructures
A3. Molecular beam epitaxy
B2. Semiconducting III–V materials
description 5 páginas, 4 figuras.-- PACS codes: 78.67.Hc; 81.05.Ea; 81.07.Ta; 81.15.Hi; 81.16.Dn
publishDate 2008
dc.date.none.fl_str_mv 2008
2011
2011
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/33722
url http://hdl.handle.net/10261/33722
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv http://dx.doi.org/10.1016/j.jcrysgro.2008.08.041
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.812429

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