Resistive switching in rectifying interfaces of metal-semiconductor-metal structures
We study the electrical characteristics of metal-semiconductor-metal HfO2_x-based devices where both metal-semiconductor interfaces present bipolar resistive switching. The device exhibits an unusual current-voltage hysteresis loop that arises from the non-trivial interplay of the switching interfac...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2013 |
| País: | Argentina |
| Institución: | Consejo Nacional de Investigaciones Científicas y Técnicas |
| Repositorio: | CONICET Digital (CONICET) |
| Idioma: | inglés |
| OAI Identifier: | oai:ri.conicet.gov.ar:11336/24929 |
| Acceso en línea: | http://hdl.handle.net/11336/24929 |
| Access Level: | acceso abierto |
| Palabra clave: | Bipolar resistive switching https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
| Sumario: | We study the electrical characteristics of metal-semiconductor-metal HfO2_x-based devices where both metal-semiconductor interfaces present bipolar resistive switching. The device exhibits an unusual current-voltage hysteresis loop that arises from the non-trivial interplay of the switching interfaces. We propose an experimental method to disentangle the individual characteristics of each interface based on hysteresis switching loops. A mathematical framework based on simple assumptions allows us to rationalize the whole behavior of the device and reproduce the experimental current-voltage curves of devices with different metallic contacts. We show that each interface complementarily switches between a nonlinear metal-semiconductor interface and an ohmic contact. |
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