Resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces
In order to determine the key parameters that control the resistive switching mechanism in metal-complex oxides interfaces, we have studied the electrical properties of metal/YBa 2Cu 3 O7- δ (YBCO) interfaces using metals with different oxidation energy and work function (Au, Pt, Ag) deposited by sp...
| Autores: | , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2011 |
| País: | Argentina |
| Institución: | Consejo Nacional de Investigaciones Científicas y Técnicas |
| Repositorio: | CONICET Digital (CONICET) |
| Idioma: | inglés |
| OAI Identifier: | oai:ri.conicet.gov.ar:11336/56571 |
| Acceso en línea: | http://hdl.handle.net/11336/56571 |
| Access Level: | acceso abierto |
| Palabra clave: | Electromigration Granular Superconductor Memory Effects Resistive Switching Effect https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
| Sumario: | In order to determine the key parameters that control the resistive switching mechanism in metal-complex oxides interfaces, we have studied the electrical properties of metal/YBa 2Cu 3 O7- δ (YBCO) interfaces using metals with different oxidation energy and work function (Au, Pt, Ag) deposited by sputtering on the surface of a YBCO ceramic sample. By analyzing the IV characteristics of the contact interfaces and the temperature dependence of their resistance, we inferred that ion migration may generate or cancel conducting filaments, which modify the resistance near the interface, in accordance with the predictions of a recent model. © 2011 Elsevier B.V. All rights reserved. |
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