Numerical analysis of si and gaas solar cells exposed to space radiation
In this paper, we present a study about Si and GaAs space solar cells by means of numerical simulations. We have investigated the variations of the short-circuit current, open circuit voltage and maximum power point, before and after the devices were irradiated with 10 MeV protons and fluences betwe...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2013 |
| País: | Argentina |
| Institución: | Consejo Nacional de Investigaciones Científicas y Técnicas |
| Repositorio: | CONICET Digital (CONICET) |
| Idioma: | español |
| OAI Identifier: | oai:ri.conicet.gov.ar:11336/23532 |
| Acceso en línea: | http://hdl.handle.net/11336/23532 |
| Access Level: | acceso abierto |
| Palabra clave: | Device Modeling Numerical Simulation Proton Radiation Effects Solar Cells https://purl.org/becyt/ford/2.2 https://purl.org/becyt/ford/2 https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
| Sumario: | In this paper, we present a study about Si and GaAs space solar cells by means of numerical simulations. We have investigated the variations of the short-circuit current, open circuit voltage and maximum power point, before and after the devices were irradiated with 10 MeV protons and fluences between 109 and 1013 p+ /cm2. The simulation results allow to obtain the optimum solar cell with specific requirements for space applications. |
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