Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry
In this paper the influence of temperature fluctuations on the response of thick gate oxide metal oxide semiconductor dosimeters is reviewed and the zero temperature coefficient (ZTC) method is evaluated for error compensation. The response of the ZTC current to irradiation is studied showing that t...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2011 |
| País: | Argentina |
| Institución: | Consejo Nacional de Investigaciones Científicas y Técnicas |
| Repositorio: | CONICET Digital (CONICET) |
| Idioma: | inglés |
| OAI Identifier: | oai:ri.conicet.gov.ar:11336/193204 |
| Acceso en línea: | http://hdl.handle.net/11336/193204 |
| Access Level: | acceso abierto |
| Palabra clave: | DOSIMETRY IONIZING RADIATION SENSORS MOS DEVICES RADIATION EFFECTS TEMPERATURE https://purl.org/becyt/ford/2.2 https://purl.org/becyt/ford/2 https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
| Sumario: | In this paper the influence of temperature fluctuations on the response of thick gate oxide metal oxide semiconductor dosimeters is reviewed and the zero temperature coefficient (ZTC) method is evaluated for error compensation. The response of the ZTC current to irradiation is studied showing that the error compensation impoverishes with absorbed dose. Finally, an explanation and analytic expression for the shifts in the ZTC current with irradiation based on the interface traps creation is proposed and verified with experimental data. |
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