Electrical characterization of a-C:H as a dielectric material in metal/insulator/metal structures

The fabrication and electrical characterization of Metal- Insulator-Metal (MIM) structures, using a-C:H films as the insulating material, are presented in this work. These PECVD carbon films show a very low dielectric constant and a very high resistivity. The current conduction mechanisms were analy...

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Authors: CARLOS ZUÑIGA ISLAS, ANDREY KOSAREV, ALFONSO TORRES JACOME, PEDRO ROSALES QUINTERO, WILFRIDO CALLEJA ARRIAGA, FRANCISCO JAVIER DE LA HIDALGA WADE, OLEKSANDR MALIK
Format: article
Status:Versión aceptada para publicación
Publication Date:2010
Country:México
Institution:Instituto Nacional de Astrofísica, Óptica y Electrónica
Repository:Repositorio Institucional del INAOE
Language:English
OAI Identifier:oai:inaoe.repositorioinstitucional.mx:1009/1524
Online Access:http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1524
Access Level:Open access
Keyword:info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2203
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spelling Electrical characterization of a-C:H as a dielectric material in metal/insulator/metal structuresCARLOS ZUÑIGA ISLASANDREY KOSAREVALFONSO TORRES JACOMEPEDRO ROSALES QUINTEROWILFRIDO CALLEJA ARRIAGAFRANCISCO JAVIER DE LA HIDALGA WADEOLEKSANDR MALIKinfo:eu-repo/classification/cti/1info:eu-repo/classification/cti/22info:eu-repo/classification/cti/2203info:eu-repo/classification/cti/2203The fabrication and electrical characterization of Metal- Insulator-Metal (MIM) structures, using a-C:H films as the insulating material, are presented in this work. These PECVD carbon films show a very low dielectric constant and a very high resistivity. The current conduction mechanisms were analyzed before and after the post deposition annealing in pure argon ambient at 400°C. For as-deposited films, the experimental J-U curves showed that under low biasing regime (|U| < 8 V) the space charge limited current conduction is the main transport mechanism, whereas under higher biasing regime (|U| > 8 V)) the current transport is dominated by the Schottky mechanism. For annealed structures, under low and high biasing the ohmic and Schottky mechanisms were identified as the main processes for the electrical transport. Finally, we found that both parameters, the dielectric constant and resistivity, decrease slightly after the thermal annealing.WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim2010info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersionapplication/pdfhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1524reponame:Repositorio Institucional del INAOEinstname:Instituto Nacional de Astrofísica, Óptica y Electrónicainstacron:INAOEengcitation:Zúñiga-Islas, C., et al., (2010). Electrical characterization of a-C:H as a dielectric material in metal/insulator/metal structures, Physica Status Solidi C, Vol. 7, (3–4): 808–811info:eu-repo/semantics/openAccesshttp://creativecommons.org/licenses/by-nc-nd/4.0oai:inaoe.repositorioinstitucional.mx:1009/15242024-08-28T03:22:57Z
dc.title.none.fl_str_mv Electrical characterization of a-C:H as a dielectric material in metal/insulator/metal structures
title Electrical characterization of a-C:H as a dielectric material in metal/insulator/metal structures
spellingShingle Electrical characterization of a-C:H as a dielectric material in metal/insulator/metal structures
CARLOS ZUÑIGA ISLAS
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2203
info:eu-repo/classification/cti/2203
title_short Electrical characterization of a-C:H as a dielectric material in metal/insulator/metal structures
title_full Electrical characterization of a-C:H as a dielectric material in metal/insulator/metal structures
title_fullStr Electrical characterization of a-C:H as a dielectric material in metal/insulator/metal structures
title_full_unstemmed Electrical characterization of a-C:H as a dielectric material in metal/insulator/metal structures
title_sort Electrical characterization of a-C:H as a dielectric material in metal/insulator/metal structures
dc.creator.none.fl_str_mv CARLOS ZUÑIGA ISLAS
ANDREY KOSAREV
ALFONSO TORRES JACOME
PEDRO ROSALES QUINTERO
WILFRIDO CALLEJA ARRIAGA
FRANCISCO JAVIER DE LA HIDALGA WADE
OLEKSANDR MALIK
author CARLOS ZUÑIGA ISLAS
author_facet CARLOS ZUÑIGA ISLAS
ANDREY KOSAREV
ALFONSO TORRES JACOME
PEDRO ROSALES QUINTERO
WILFRIDO CALLEJA ARRIAGA
FRANCISCO JAVIER DE LA HIDALGA WADE
OLEKSANDR MALIK
author_role author
author2 ANDREY KOSAREV
ALFONSO TORRES JACOME
PEDRO ROSALES QUINTERO
WILFRIDO CALLEJA ARRIAGA
FRANCISCO JAVIER DE LA HIDALGA WADE
OLEKSANDR MALIK
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2203
info:eu-repo/classification/cti/2203
topic info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2203
info:eu-repo/classification/cti/2203
description The fabrication and electrical characterization of Metal- Insulator-Metal (MIM) structures, using a-C:H films as the insulating material, are presented in this work. These PECVD carbon films show a very low dielectric constant and a very high resistivity. The current conduction mechanisms were analyzed before and after the post deposition annealing in pure argon ambient at 400°C. For as-deposited films, the experimental J-U curves showed that under low biasing regime (|U| < 8 V) the space charge limited current conduction is the main transport mechanism, whereas under higher biasing regime (|U| > 8 V)) the current transport is dominated by the Schottky mechanism. For annealed structures, under low and high biasing the ohmic and Schottky mechanisms were identified as the main processes for the electrical transport. Finally, we found that both parameters, the dielectric constant and resistivity, decrease slightly after the thermal annealing.
publishDate 2010
dc.date.none.fl_str_mv 2010
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1524
url http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1524
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv citation:Zúñiga-Islas, C., et al., (2010). Electrical characterization of a-C:H as a dielectric material in metal/insulator/metal structures, Physica Status Solidi C, Vol. 7, (3–4): 808–811
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0
eu_rights_str_mv openAccess
rights_invalid_str_mv http://creativecommons.org/licenses/by-nc-nd/4.0
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
publisher.none.fl_str_mv WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
dc.source.none.fl_str_mv reponame:Repositorio Institucional del INAOE
instname:Instituto Nacional de Astrofísica, Óptica y Electrónica
instacron:INAOE
instname_str Instituto Nacional de Astrofísica, Óptica y Electrónica
instacron_str INAOE
institution INAOE
reponame_str Repositorio Institucional del INAOE
collection Repositorio Institucional del INAOE
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,812429

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