Fabrication and characterization of metal-oxide-semiconductor (MOS) capacitors based on Al2O3-ZrO2 nanolaminates
Today, the research and development of electronic devices involves miniaturization and better performance of these. MOS (Metal - Oxide – Semiconductor) capacitors have used Silicon Oxide (SiO2) for many years as dielectric material, but the need for miniaturization and development of these has taken...
| Autor: | |
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| Tipo de recurso: | tesis de maestría |
| Estado: | Versión publicada |
| Fecha de publicación: | 2018 |
| País: | México |
| Institución: | Centro de Investigación Científica y de Educación Superior de Ensenada |
| Repositorio: | Repositorio Institucional CICESE |
| Idioma: | inglés |
| OAI Identifier: | oai:cicese.repositorioinstitucional.mx:1007/2430 |
| Acceso en línea: | http://cicese.repositorioinstitucional.mx/jspui/handle/1007/2430 |
| Access Level: | acceso abierto |
| Palabra clave: | info:eu-repo/classification/Autor/Capacitor MOS, dielectric nanolaminates, thermal and plasma ALD, ZrO2, Al2O3 info:eu-repo/classification/cti/7 info:eu-repo/classification/cti/33 info:eu-repo/classification/cti/3322 info:eu-repo/classification/cti/332299 |
| Sumario: | Today, the research and development of electronic devices involves miniaturization and better performance of these. MOS (Metal - Oxide – Semiconductor) capacitors have used Silicon Oxide (SiO2) for many years as dielectric material, but the need for miniaturization and development of these has taken this material to its limits. Many researchers have proposed as solution to change this material for a material of high k. One of the promising materials to replace SiO2 is Zirconium Oxide (ZrO2), due to its high dielectric constant, thermal stability with Silicon (Si), etc. However, one of the problems of using ZrO2 as a dielectric material is that it allows high leakage currents attributed to crystallization of material. One way to solve this problem is by adding a laminate of Aluminum Oxide (Al2O3, amorphous material) between the film to prevent crystallization. In this project, MOS capacitors were fabricated using nanolaminates of Al2O3 and ZrO2 (AZrA) as dielectric material, synthesized by the plasma enhanced atomic layer deposition technique (PEALD). The gold electrodes were deposited by thermal evaporation. The thickness and bandgap of the nanolaminates were measured by ellipsometry and UV-Vis spectroscopy, obtaining a control of thickness and modulation of the bandgap. The X-ray photoelectron (XPS) spectrum shows the characteristic peaks of Al2O3 and ZrO2, after the erosion of Argon (Ar) decreases the concentration of impurities of carbon (C) attributed to the synthesis technique (PEALD). The thin film of ZrO2 shows a roughness of root mean square (RMS) 1.686 and 0.625 nm for Al2O3 measured by Atomico Force Microscopy (AFM). The X-Ray Diffraction (XRD) spectrum shows cubic crystalline phase for the ZrO2 film and amorphous for the Al2O3 film. For the electrical characterization curves capacitance - voltage (C-V) and current - voltage (I-V) were acquired, obtaining a control of the capacitance, dielectric constant, Equivalent Oxide Thickness (EOT), leakage current and breakdown voltage. |
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