Complex refractive index of InXGa1-XN thin films grown on cubic (100) GaN/MgO

"Spectroscopic ellipsometry measurements of InXGa1-XN thin films were carried out in the photon energy range from 0.6 to 4.75 eV. The samples were grown on cubic GaN/MgO (100) template substrates by plasma assisted molecular beam epitaxy. Optical properties as the energy gap, refractive index (...

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Detalles Bibliográficos
Autores: Heber Vilchis, VICENTE DAMIAN COMPEAN GARCIA, Ignacio Everardo Orozco Hinostroza, Edgar López Luna, Miguel Angel Vidal Borbolla, Angel Rodriguez
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2017
País:México
Institución:Instituto Potosino de Investigación Científica y Tecnológica
Repositorio:Repositorio Institucional del IPICYT
OAI Identifier:oai:ipicyt.repositorioinstitucional.mx:1010/1786
Acceso en línea:http://ipicyt.repositorioinstitucional.mx/jspui/handle/1010/1786
Access Level:acceso abierto
Palabra clave:info:eu-repo/classification/Autor/Ellipsometry
info:eu-repo/classification/Autor/III-nitrides
info:eu-repo/classification/Autor/Molecular beam epitaxy
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
id MX_e1cee3be3f1cf3fa791bbb8534ebcdb2
oai_identifier_str oai:ipicyt.repositorioinstitucional.mx:1010/1786
network_acronym_str MX
network_name_str México
repository_id_str
spelling Complex refractive index of InXGa1-XN thin films grown on cubic (100) GaN/MgOHeber VilchisVICENTE DAMIAN COMPEAN GARCIAIgnacio Everardo Orozco HinostrozaEdgar López LunaMiguel Angel Vidal BorbollaAngel Rodriguezinfo:eu-repo/classification/Autor/Ellipsometryinfo:eu-repo/classification/Autor/III-nitridesinfo:eu-repo/classification/Autor/Molecular beam epitaxyinfo:eu-repo/classification/cti/1info:eu-repo/classification/cti/22info:eu-repo/classification/cti/22"Spectroscopic ellipsometry measurements of InXGa1-XN thin films were carried out in the photon energy range from 0.6 to 4.75 eV. The samples were grown on cubic GaN/MgO (100) template substrates by plasma assisted molecular beam epitaxy. Optical properties as the energy gap, refractive index (η) and extinction coefficient (κ) were obtained from the analysis of experimental data by a parametric dielectric function model. Our results show that the behavior of the optical band gap of cubic InXGa1-XN fits Eg(x) = 1.407x2 − 3.662x + 3.2 eV. The obtained bowing parameter of 1.4 ± 0.1 eV is in good agreement with reported calculated values around 1.37 eV. The complex index of refraction dispersion relations η(ω) and κ(ω) are obtained for the 85–99% mostly cubic InXGa1-XN films for several In concentrations."Elsevier2017info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersionapplication/pdfhttp://ipicyt.repositorioinstitucional.mx/jspui/handle/1010/1786reponame:Repositorio Institucional del IPICYTinstname:Instituto Potosino de Investigación Científica y Tecnológicainstacron:IPICYTinfo:eu-repo/semantics/altIdentifier/DOI/https://doi.org/10.1016/j.tsf.2017.02.016citation:H. Vilchis, V.D. Compeán-García, I.E. Orozco-Hinostroza, E. López-Luna, M.A. Vidal, A.G. Rodríguez, Complex refractive index of InXGa1-XN thin films grown on cubic (100) GaN/MgO, Thin Solid Films, Volume 626, 2017, Pages 55-59.info:eu-repo/semantics/openAccesshttp://creativecommons.org/licenses/by-nc-nd/4.0oai:ipicyt.repositorioinstitucional.mx:1010/17862024-08-28T03:17:45Z
dc.title.none.fl_str_mv Complex refractive index of InXGa1-XN thin films grown on cubic (100) GaN/MgO
title Complex refractive index of InXGa1-XN thin films grown on cubic (100) GaN/MgO
spellingShingle Complex refractive index of InXGa1-XN thin films grown on cubic (100) GaN/MgO
Heber Vilchis
info:eu-repo/classification/Autor/Ellipsometry
info:eu-repo/classification/Autor/III-nitrides
info:eu-repo/classification/Autor/Molecular beam epitaxy
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/22
title_short Complex refractive index of InXGa1-XN thin films grown on cubic (100) GaN/MgO
title_full Complex refractive index of InXGa1-XN thin films grown on cubic (100) GaN/MgO
title_fullStr Complex refractive index of InXGa1-XN thin films grown on cubic (100) GaN/MgO
title_full_unstemmed Complex refractive index of InXGa1-XN thin films grown on cubic (100) GaN/MgO
title_sort Complex refractive index of InXGa1-XN thin films grown on cubic (100) GaN/MgO
dc.creator.none.fl_str_mv Heber Vilchis
VICENTE DAMIAN COMPEAN GARCIA
Ignacio Everardo Orozco Hinostroza
Edgar López Luna
Miguel Angel Vidal Borbolla
Angel Rodriguez
author Heber Vilchis
author_facet Heber Vilchis
VICENTE DAMIAN COMPEAN GARCIA
Ignacio Everardo Orozco Hinostroza
Edgar López Luna
Miguel Angel Vidal Borbolla
Angel Rodriguez
author_role author
author2 VICENTE DAMIAN COMPEAN GARCIA
Ignacio Everardo Orozco Hinostroza
Edgar López Luna
Miguel Angel Vidal Borbolla
Angel Rodriguez
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv info:eu-repo/classification/Autor/Ellipsometry
info:eu-repo/classification/Autor/III-nitrides
info:eu-repo/classification/Autor/Molecular beam epitaxy
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/22
topic info:eu-repo/classification/Autor/Ellipsometry
info:eu-repo/classification/Autor/III-nitrides
info:eu-repo/classification/Autor/Molecular beam epitaxy
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/22
description "Spectroscopic ellipsometry measurements of InXGa1-XN thin films were carried out in the photon energy range from 0.6 to 4.75 eV. The samples were grown on cubic GaN/MgO (100) template substrates by plasma assisted molecular beam epitaxy. Optical properties as the energy gap, refractive index (η) and extinction coefficient (κ) were obtained from the analysis of experimental data by a parametric dielectric function model. Our results show that the behavior of the optical band gap of cubic InXGa1-XN fits Eg(x) = 1.407x2 − 3.662x + 3.2 eV. The obtained bowing parameter of 1.4 ± 0.1 eV is in good agreement with reported calculated values around 1.37 eV. The complex index of refraction dispersion relations η(ω) and κ(ω) are obtained for the 85–99% mostly cubic InXGa1-XN films for several In concentrations."
publishDate 2017
dc.date.none.fl_str_mv 2017
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv http://ipicyt.repositorioinstitucional.mx/jspui/handle/1010/1786
url http://ipicyt.repositorioinstitucional.mx/jspui/handle/1010/1786
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/DOI/https://doi.org/10.1016/j.tsf.2017.02.016
citation:H. Vilchis, V.D. Compeán-García, I.E. Orozco-Hinostroza, E. López-Luna, M.A. Vidal, A.G. Rodríguez, Complex refractive index of InXGa1-XN thin films grown on cubic (100) GaN/MgO, Thin Solid Films, Volume 626, 2017, Pages 55-59.
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0
eu_rights_str_mv openAccess
rights_invalid_str_mv http://creativecommons.org/licenses/by-nc-nd/4.0
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:Repositorio Institucional del IPICYT
instname:Instituto Potosino de Investigación Científica y Tecnológica
instacron:IPICYT
instname_str Instituto Potosino de Investigación Científica y Tecnológica
instacron_str IPICYT
institution IPICYT
reponame_str Repositorio Institucional del IPICYT
collection Repositorio Institucional del IPICYT
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,81155

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