Integration of MOSFET/MIM structures using a CMOS-based technology for pH detection applications with high-sensitivity

In this work, we show that by using Metal-Insulator-Metal (MIM) structures integrated in series to the gateof submicron Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) devices, highly-sensitive and ultra-lowpower consumption pH sensors can be obtained. One MIM capacitor enables external p...

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Detalles Bibliográficos
Autores: Joel Molina Reyes, ALFONSO TORRES JACOME, GUILLERMO ESPINOSA FLORES VERDAD, MARIA TERESA SANZ PASCUAL, Erick Guerrero Rodríguez, BERNI MANOLO PEREZ RAMOS
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2012
País:México
Institución:Instituto Nacional de Astrofísica, Óptica y Electrónica
Repositorio:Repositorio Institucional del INAOE
Idioma:inglés
OAI Identifier:oai:inaoe.repositorioinstitucional.mx:1009/2068
Acceso en línea:http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2068
Access Level:acceso abierto
Palabra clave:info:eu-repo/classification/Inspec/ISFET
info:eu-repo/classification/Inspec/MOSFET
info:eu-repo/classification/Inspec/MIM capacitor
info:eu-repo/classification/Inspec/Reference electrode
info:eu-repo/classification/Inspec/pH detection
info:eu-repo/classification/Inspec/Chemical sensor
info:eu-repo/classification/Inspec/CMOS processing.
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2203
Descripción
Sumario:In this work, we show that by using Metal-Insulator-Metal (MIM) structures integrated in series to the gateof submicron Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) devices, highly-sensitive and ultra-lowpower consumption pH sensors can be obtained. One MIM capacitor enables external polarization of the MOSFETdevice while a second MIM capacitor is connected to a sensing plate whose surface is whether a thick polyimidelayer or the last metallization level. The electrochemical response of these surfaces to pH buffer solutions resemblesthat of Ion-Sensitive Field-Effect Transistor (ISFET) devices whose pH sensitivity is dependent on the type of surfacematerial being exposed.

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