Doping of silicon phthalocyanine based organic semiconductor

Traditionally, organic compounds have been considered electrical insulators. However, the study of organic semiconductors has led to the development of alternatives to semiconductor silicon, based on π-conjugated molecules such as phthalocyanines. In the present study, chemical doping was carried on...

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Detalhes bibliográficos
Autores: Sandoval-Plata, Emilio Iván, Ballinas-Indili, Ricardo, Álvarez-Toledano, Cecilio, Sánchez-Vergara, María Elena
Formato: artículo
Estado:Versión publicada
Fecha de publicación:2023
País:México
Recursos:UNIVERSIDAD AUTÓNOMA DEL ESTADO DE HIDALGO
Repositorio:PÄDI Boletín Científico de Ciencias Básicas e Ingeniería del ICBI
Idioma:español
OAI Identifier:oai:repository.uaeh.edu.mx:article/11368
Acesso em linha:https://repository.uaeh.edu.mx/revistas/index.php/icbi/article/view/11368
Access Level:acceso abierto
Palavra-chave:Organic semiconductor
Silicon phthalocyanine
Film
Optical properties
Electrical properties
Semiconductor orgánico
Ftalocianina de silicio
Película
Propiedades ópticas
Propiedades eléctricas
Descrição
Resumo:Traditionally, organic compounds have been considered electrical insulators. However, the study of organic semiconductors has led to the development of alternatives to semiconductor silicon, based on π-conjugated molecules such as phthalocyanines. In the present study, chemical doping was carried on silicon phthalocyanine dichloride (SiPcCl2), with a bromide Br-1 substituted dienynoic acid (BrDAc). Resulting doped organic semiconductor was high-vacuum sublimated and deposited onto different substrates as a means to conduct structural, optical, and electric characterization as thin film. For structural characterization, infrared spectroscopy was carried out, and optical parameters were reviewed, such as transmittance and absorbance, obtained by ultraviolet-visible spectroscopy. From these results, energy gaps were determined making use of Tauc’s model. Finally, simple electrical devices: ITO/SiPcCl2-BrDAc/Ag were fabricated and electrically characterized, to assess the behavior when thin semiconductor film SiPcCl2-BrDAc is part of a simple device.