Doping of silicon phthalocyanine based organic semiconductor
Traditionally, organic compounds have been considered electrical insulators. However, the study of organic semiconductors has led to the development of alternatives to semiconductor silicon, based on π-conjugated molecules such as phthalocyanines. In the present study, chemical doping was carried on...
| Autores: | , , , |
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| Formato: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2023 |
| País: | México |
| Recursos: | UNIVERSIDAD AUTÓNOMA DEL ESTADO DE HIDALGO |
| Repositorio: | PÄDI Boletín Científico de Ciencias Básicas e Ingeniería del ICBI |
| Idioma: | español |
| OAI Identifier: | oai:repository.uaeh.edu.mx:article/11368 |
| Acesso em linha: | https://repository.uaeh.edu.mx/revistas/index.php/icbi/article/view/11368 |
| Access Level: | acceso abierto |
| Palavra-chave: | Organic semiconductor Silicon phthalocyanine Film Optical properties Electrical properties Semiconductor orgánico Ftalocianina de silicio Película Propiedades ópticas Propiedades eléctricas |
| Resumo: | Traditionally, organic compounds have been considered electrical insulators. However, the study of organic semiconductors has led to the development of alternatives to semiconductor silicon, based on π-conjugated molecules such as phthalocyanines. In the present study, chemical doping was carried on silicon phthalocyanine dichloride (SiPcCl2), with a bromide Br-1 substituted dienynoic acid (BrDAc). Resulting doped organic semiconductor was high-vacuum sublimated and deposited onto different substrates as a means to conduct structural, optical, and electric characterization as thin film. For structural characterization, infrared spectroscopy was carried out, and optical parameters were reviewed, such as transmittance and absorbance, obtained by ultraviolet-visible spectroscopy. From these results, energy gaps were determined making use of Tauc’s model. Finally, simple electrical devices: ITO/SiPcCl2-BrDAc/Ag were fabricated and electrically characterized, to assess the behavior when thin semiconductor film SiPcCl2-BrDAc is part of a simple device. |
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