Microcrystalline-phase p-type a-Si:O:H windows prepared by Cat-CVD

Different amounts of oxygen, boron-doped hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon (µc-Si:H) deposition were carried out using catalytic chemical-vapor deposition (Cat-CVD) process. Pure silane (SiH4), hydrogen (H2), oxygen (O2), and diluted diborane (B2H6) ga...

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Detalhes bibliográficos
Autores: YASUHIRO MATSUMOTO KUWABARA, ZHENRUI YU
Formato: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2008
País:México
Recursos:Instituto Nacional de Astrofísica, Óptica y Electrónica
Repositorio:Repositorio Institucional del INAOE
Idioma:inglés
OAI Identifier:oai:inaoe.repositorioinstitucional.mx:1009/1108
Acesso em linha:http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1108
Access Level:acceso abierto
Palavra-chave:info:eu-repo/classification/Boron-doped silicon oxide/Boron-doped silicon oxide
info:eu-repo/classification/Solar cell windows/Solar cell windows
info:eu-repo/classification/Catalytic-CVD/Catalytic-CVD
info:eu-repo/classification/Microcrystalline silicon/Microcrystalline silicon
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2203
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spelling Microcrystalline-phase p-type a-Si:O:H windows prepared by Cat-CVDYASUHIRO MATSUMOTO KUWABARAZHENRUI YUinfo:eu-repo/classification/Boron-doped silicon oxide/Boron-doped silicon oxideinfo:eu-repo/classification/Solar cell windows/Solar cell windowsinfo:eu-repo/classification/Catalytic-CVD/Catalytic-CVDinfo:eu-repo/classification/Microcrystalline silicon/Microcrystalline siliconinfo:eu-repo/classification/cti/1info:eu-repo/classification/cti/22info:eu-repo/classification/cti/2203info:eu-repo/classification/cti/2203Different amounts of oxygen, boron-doped hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon (µc-Si:H) deposition were carried out using catalytic chemical-vapor deposition (Cat-CVD) process. Pure silane (SiH4), hydrogen (H2), oxygen (O2), and diluted diborane (B2H6) gases were used at the deposition pressure of 0.1–0.5 Torr. The tungsten catalyst temperature (Tfil) was varied from 1700 to 2100 1C. Sample transmittance measurement shows an optical-band gap (Egopt ) variation from 1.45 to 2.1 eV X-ray diffraction (XRD) spectra have revealed silicon microcrystalline phases for the samples prepared at the temperature greater than Tfil~1900 oC. For the used silicon oxide deposition conditions, no strong tungsten filament degradation was observed after a number of sample preparations.Elsevier B.V.2008info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersionapplication/pdfhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1108reponame:Repositorio Institucional del INAOEinstname:Instituto Nacional de Astrofísica, Óptica y Electrónicainstacron:INAOEengcitation:Matsumoto, Y. , et al., (2008). Microcrystalline-phase p-type a-Si:O:H windows prepared by Cat-CVD, Solar Energy Materials & Solar Cells (92): 576–580info:eu-repo/semantics/openAccesshttp://creativecommons.org/licenses/by-nc-nd/4.0oai:inaoe.repositorioinstitucional.mx:1009/11082024-08-28T03:22:51Z
dc.title.none.fl_str_mv Microcrystalline-phase p-type a-Si:O:H windows prepared by Cat-CVD
title Microcrystalline-phase p-type a-Si:O:H windows prepared by Cat-CVD
spellingShingle Microcrystalline-phase p-type a-Si:O:H windows prepared by Cat-CVD
YASUHIRO MATSUMOTO KUWABARA
info:eu-repo/classification/Boron-doped silicon oxide/Boron-doped silicon oxide
info:eu-repo/classification/Solar cell windows/Solar cell windows
info:eu-repo/classification/Catalytic-CVD/Catalytic-CVD
info:eu-repo/classification/Microcrystalline silicon/Microcrystalline silicon
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2203
info:eu-repo/classification/cti/2203
title_short Microcrystalline-phase p-type a-Si:O:H windows prepared by Cat-CVD
title_full Microcrystalline-phase p-type a-Si:O:H windows prepared by Cat-CVD
title_fullStr Microcrystalline-phase p-type a-Si:O:H windows prepared by Cat-CVD
title_full_unstemmed Microcrystalline-phase p-type a-Si:O:H windows prepared by Cat-CVD
title_sort Microcrystalline-phase p-type a-Si:O:H windows prepared by Cat-CVD
dc.creator.none.fl_str_mv YASUHIRO MATSUMOTO KUWABARA
ZHENRUI YU
author YASUHIRO MATSUMOTO KUWABARA
author_facet YASUHIRO MATSUMOTO KUWABARA
ZHENRUI YU
author_role author
author2 ZHENRUI YU
author2_role author
dc.subject.none.fl_str_mv info:eu-repo/classification/Boron-doped silicon oxide/Boron-doped silicon oxide
info:eu-repo/classification/Solar cell windows/Solar cell windows
info:eu-repo/classification/Catalytic-CVD/Catalytic-CVD
info:eu-repo/classification/Microcrystalline silicon/Microcrystalline silicon
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2203
info:eu-repo/classification/cti/2203
topic info:eu-repo/classification/Boron-doped silicon oxide/Boron-doped silicon oxide
info:eu-repo/classification/Solar cell windows/Solar cell windows
info:eu-repo/classification/Catalytic-CVD/Catalytic-CVD
info:eu-repo/classification/Microcrystalline silicon/Microcrystalline silicon
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2203
info:eu-repo/classification/cti/2203
description Different amounts of oxygen, boron-doped hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon (µc-Si:H) deposition were carried out using catalytic chemical-vapor deposition (Cat-CVD) process. Pure silane (SiH4), hydrogen (H2), oxygen (O2), and diluted diborane (B2H6) gases were used at the deposition pressure of 0.1–0.5 Torr. The tungsten catalyst temperature (Tfil) was varied from 1700 to 2100 1C. Sample transmittance measurement shows an optical-band gap (Egopt ) variation from 1.45 to 2.1 eV X-ray diffraction (XRD) spectra have revealed silicon microcrystalline phases for the samples prepared at the temperature greater than Tfil~1900 oC. For the used silicon oxide deposition conditions, no strong tungsten filament degradation was observed after a number of sample preparations.
publishDate 2008
dc.date.none.fl_str_mv 2008
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1108
url http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1108
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv citation:Matsumoto, Y. , et al., (2008). Microcrystalline-phase p-type a-Si:O:H windows prepared by Cat-CVD, Solar Energy Materials & Solar Cells (92): 576–580
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0
eu_rights_str_mv openAccess
rights_invalid_str_mv http://creativecommons.org/licenses/by-nc-nd/4.0
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier B.V.
publisher.none.fl_str_mv Elsevier B.V.
dc.source.none.fl_str_mv reponame:Repositorio Institucional del INAOE
instname:Instituto Nacional de Astrofísica, Óptica y Electrónica
instacron:INAOE
instname_str Instituto Nacional de Astrofísica, Óptica y Electrónica
instacron_str INAOE
institution INAOE
reponame_str Repositorio Institucional del INAOE
collection Repositorio Institucional del INAOE
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.812429

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