Spatially Photoluminescence Spectroscopy of InAs/InGaAs Quantum Dot Nanostructures
Spatially resolved photoluminescence (PL) spectroscopy was performed in self-assembled InAs quantum dots (QD) embedded into Molecular Beam Epitaxy (MBE) grown In0.15Ga0.85As/GaAs multi-quantum-well heterostructures. This type of heterostructures currently is used for creation of new generation laser...
| Autores: | , , |
|---|---|
| Formato: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2011 |
| País: | México |
| Recursos: | Universidad Nacional Autónoma de México |
| Repositorio: | Redalyc-UNAM |
| OAI Identifier: | oai:redalyc.org:61420351004 |
| Acesso em linha: | https://www.redalyc.org/articulo.oa?id=61420351004 |
| Access Level: | acceso abierto |
| Palavra-chave: | Ingeniería inhomogeneity quantum dot (QD) multi excited state Photoluminescence spectroscopy |
| Resumo: | Spatially resolved photoluminescence (PL) spectroscopy was performed in self-assembled InAs quantum dots (QD) embedded into Molecular Beam Epitaxy (MBE) grown In0.15Ga0.85As/GaAs multi-quantum-well heterostructures. This type of heterostructures currently is used for creation of new generation lasers for optical fiber communication. Stronginhomogeneity of the PL intensity is observed by mapping samples with different In/Ga composition of the layers covered the quantum dots in the quantum well. Two different behaviors in the quantum dot PL maps are clearly observed and identified: 1) a reduction of the PL intensity is accompanied with a monotonous "blue" shift of the luminescence maximum at room temperature, and 2) the PL intensity degradation matches a stable peak position of the PL maximum. |
|---|