Ground and Excited States Energy in InAs Quantum Dots in a Well InGaAs/GaAs Structures
This paper presents the photoluminescence study at 80 K and scanning photoluminescence spectroscopy investigation of the ground and multiexcited states at 80 and 300 K in InAs quantum dots (QDs) inserted in symmetric In0.15Ga0.85As/GaAs QW structures created at different QD growth temperatures. It i...
| Autores: | , , |
|---|---|
| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2012 |
| País: | México |
| Institución: | Instituto Politécnico Nacional |
| Repositorio: | Redalyc-IPN |
| OAI Identifier: | oai:redalyc.org:61426384001 |
| Acceso en línea: | https://www.redalyc.org/articulo.oa?id=61426384001 |
| Access Level: | acceso abierto |
| Palabra clave: | Ingeniería QD sizes ground state growth temperatures multi excited state energy |
| Sumario: | This paper presents the photoluminescence study at 80 K and scanning photoluminescence spectroscopy investigation of the ground and multiexcited states at 80 and 300 K in InAs quantum dots (QDs) inserted in symmetric In0.15Ga0.85As/GaAs QW structures created at different QD growth temperatures. It is shown that some of the structures investigated exhibit a spatial long range variation of the average QD size in the QD ensemble across the sample. This long range QD size inhomogeneity was used for an investigation of the multiexcited state energy trend versus ground state energy (or QD sizes). Experimental results were compared with the electron-hole level energy trend versus QD size predicted theoretically on the base of the 8-band k.p approach. Some correlation between experimental and theoretical results has been revealed and discussed. |
|---|