XPS analysis of oxidation states of Te in CdTe oxide films grown by rf sputtering with an Ar -NH3 plasma
Using rf-sputtering, CdTe oxide films were grown on glass substrates in a controlled plasma of Ar-NH3. The elementalconcentration and oxidation state of Te were determined by x-ray photoelectron spectroscopy. When the NH3 partialpressure increases from 3´10-6 to 1´10-4 Torr, the relative atomic conc...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2001 |
| País: | México |
| Institución: | Universidad Nacional Autónoma de México |
| Repositorio: | Redalyc-UNAM |
| OAI Identifier: | oai:redalyc.org:94201203 |
| Acceso en línea: | https://www.redalyc.org/articulo.oa?id=94201203 |
| Access Level: | acceso abierto |
| Palabra clave: | Física, Astronomía y Matemáticas XPS Ammonia CdTe oxide Sputtering |
| Sumario: | Using rf-sputtering, CdTe oxide films were grown on glass substrates in a controlled plasma of Ar-NH3. The elementalconcentration and oxidation state of Te were determined by x-ray photoelectron spectroscopy. When the NH3 partialpressure increases from 3´10-6 to 1´10-4 Torr, the relative atomic concentration of oxygen incorporated in the filmsincreases, whereas those of Cd and Te decrease. For the NH3 partial pressures of 6´10-6 Torr and smaller than 7´10-5 Torr,in films of CdTe oxide coexist different oxidation states of Te, Te-2 as in CdTe and Te+4 as in CdTeO3. While that for NH3partial pressure of 1´10-4 Torr and up, the films only contain the oxidation state Te+4. With x-ray diffraction it is observedthat when the NH3 pressure in creases the oxide films of CdTe become amorphous |
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