Effects of temperature and deposition time on the RF- sputtered CdTe films preparation
In this work, CdTe thin films were deposited by rf-sputtering at different substrate temperatures (room temperature (RT), 100, 150, 200, and 250 °C) and deposition times (30, 60, and 90 min). The applied power and vacuum pressure were maintained fixed for all depositions. A mean value of 18 .5 nm/s...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2014 |
| País: | México |
| Institución: | Centro de Investigación y de Estudios Avanzados del IPN |
| Repositorio: | Redalyc-CINVESTAV |
| OAI Identifier: | oai:redalyc.org:94231175004 |
| Acceso en línea: | https://www.redalyc.org/articulo.oa?id=94231175004 |
| Access Level: | acceso abierto |
| Palabra clave: | Física, Astronomía y Matemáticas CdTe Thin films Magnetron sputtering Substrate temperature |
| Sumario: | In this work, CdTe thin films were deposited by rf-sputtering at different substrate temperatures (room temperature (RT), 100, 150, 200, and 250 °C) and deposition times (30, 60, and 90 min). The applied power and vacuum pressure were maintained fixed for all depositions. A mean value of 18 .5 nm/s on the deposition rate was maintained for films deposition. The surface morphology, rms-roughness, and grain size of the sputtered-films were obtained from atomic force microscopy and scanning electron microscopy images for comparison. CdTe films deposited during 60 min presented high reproducibility, because their consistent thickness value (1.2 μ m) at different substrate temperatures. Higher thickness than 1.81 μ m was obtained for films deposited at 250 °C and 90 min. CdTe films deposited at 150 °C present minor dispersion on thickness, while rms-roughness increa sed with the increase of substrate temperature but only for films deposited at 60 and 90 min. CdTe film deposited at 250 °C during 90 mi n was selected as appropriate for CdS/CdTe solar cells preparation. |
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