Design of graphene electronic devices using nanoribbons of different widths

"We present a simple design of a field effect transistor based on graphene nanoribbons, taking advantage of the metallic and semiconductor nature of nanoribbons with different widths. Such device could be constructed by using lithography techniques. The conductance of the proposed device is obt...

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Detalles Bibliográficos
Autores: Gerardo Naumis, MAURICIO TERRONES MALDONADO, HUMBERTO TERRONES MALDONADO, LUIS MANUEL GAGGERO SAGER
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2009
País:México
Institución:Instituto Potosino de Investigación Científica y Tecnológica
Repositorio:Repositorio Institucional del IPICYT
Idioma:inglés
OAI Identifier:oai:ipicyt.repositorioinstitucional.mx:1010/1114
Acceso en línea:http://ipicyt.repositorioinstitucional.mx/jspui/handle/1010/1114
Access Level:acceso abierto
Palabra clave:info:eu-repo/classification/Autor/Electrical resistivity
info:eu-repo/classification/Autor/Field effect transistors
info:eu-repo/classification/Autor/Graphene
info:eu-repo/classification/Autor/Nanolithography
info:eu-repo/classification/Autor/Nanostructured materials
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
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network_name_str México
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spelling Design of graphene electronic devices using nanoribbons of different widthsGerardo NaumisMAURICIO TERRONES MALDONADOHUMBERTO TERRONES MALDONADOLUIS MANUEL GAGGERO SAGERinfo:eu-repo/classification/Autor/Electrical resistivityinfo:eu-repo/classification/Autor/Field effect transistorsinfo:eu-repo/classification/Autor/Grapheneinfo:eu-repo/classification/Autor/Nanolithographyinfo:eu-repo/classification/Autor/Nanostructured materialsinfo:eu-repo/classification/cti/1info:eu-repo/classification/cti/22info:eu-repo/classification/cti/22"We present a simple design of a field effect transistor based on graphene nanoribbons, taking advantage of the metallic and semiconductor nature of nanoribbons with different widths. Such device could be constructed by using lithography techniques. The conductance of the proposed device is obtained by using the Kubo formula, assuming a strong damping due to the substrate and imperfections of the lattice. By removing the control electrodes, the design could also be used as an electrical resistance."American Institute of Physics2009-10info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttp://ipicyt.repositorioinstitucional.mx/jspui/handle/1010/1114reponame:Repositorio Institucional del IPICYTinstname:Instituto Potosino de Investigación Científica y Tecnológicainstacron:IPICYTenginfo:eu-repo/semantics/altIdentifier/DOI/https://doi.org/10.1063/1.3257731citation:Appl. Phys. Lett. 95, 182104 (2009);info:eu-repo/semantics/openAccesshttp://creativecommons.org/licenses/by-nc-nd/4.0oai:ipicyt.repositorioinstitucional.mx:1010/11142024-08-28T03:17:36Z
dc.title.none.fl_str_mv Design of graphene electronic devices using nanoribbons of different widths
title Design of graphene electronic devices using nanoribbons of different widths
spellingShingle Design of graphene electronic devices using nanoribbons of different widths
Gerardo Naumis
info:eu-repo/classification/Autor/Electrical resistivity
info:eu-repo/classification/Autor/Field effect transistors
info:eu-repo/classification/Autor/Graphene
info:eu-repo/classification/Autor/Nanolithography
info:eu-repo/classification/Autor/Nanostructured materials
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/22
title_short Design of graphene electronic devices using nanoribbons of different widths
title_full Design of graphene electronic devices using nanoribbons of different widths
title_fullStr Design of graphene electronic devices using nanoribbons of different widths
title_full_unstemmed Design of graphene electronic devices using nanoribbons of different widths
title_sort Design of graphene electronic devices using nanoribbons of different widths
dc.creator.none.fl_str_mv Gerardo Naumis
MAURICIO TERRONES MALDONADO
HUMBERTO TERRONES MALDONADO
LUIS MANUEL GAGGERO SAGER
author Gerardo Naumis
author_facet Gerardo Naumis
MAURICIO TERRONES MALDONADO
HUMBERTO TERRONES MALDONADO
LUIS MANUEL GAGGERO SAGER
author_role author
author2 MAURICIO TERRONES MALDONADO
HUMBERTO TERRONES MALDONADO
LUIS MANUEL GAGGERO SAGER
author2_role author
author
author
dc.subject.none.fl_str_mv info:eu-repo/classification/Autor/Electrical resistivity
info:eu-repo/classification/Autor/Field effect transistors
info:eu-repo/classification/Autor/Graphene
info:eu-repo/classification/Autor/Nanolithography
info:eu-repo/classification/Autor/Nanostructured materials
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/22
topic info:eu-repo/classification/Autor/Electrical resistivity
info:eu-repo/classification/Autor/Field effect transistors
info:eu-repo/classification/Autor/Graphene
info:eu-repo/classification/Autor/Nanolithography
info:eu-repo/classification/Autor/Nanostructured materials
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/22
description "We present a simple design of a field effect transistor based on graphene nanoribbons, taking advantage of the metallic and semiconductor nature of nanoribbons with different widths. Such device could be constructed by using lithography techniques. The conductance of the proposed device is obtained by using the Kubo formula, assuming a strong damping due to the substrate and imperfections of the lattice. By removing the control electrodes, the design could also be used as an electrical resistance."
publishDate 2009
dc.date.none.fl_str_mv 2009-10
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://ipicyt.repositorioinstitucional.mx/jspui/handle/1010/1114
url http://ipicyt.repositorioinstitucional.mx/jspui/handle/1010/1114
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/DOI/https://doi.org/10.1063/1.3257731
citation:Appl. Phys. Lett. 95, 182104 (2009);
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0
eu_rights_str_mv openAccess
rights_invalid_str_mv http://creativecommons.org/licenses/by-nc-nd/4.0
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:Repositorio Institucional del IPICYT
instname:Instituto Potosino de Investigación Científica y Tecnológica
instacron:IPICYT
instname_str Instituto Potosino de Investigación Científica y Tecnológica
instacron_str IPICYT
institution IPICYT
reponame_str Repositorio Institucional del IPICYT
collection Repositorio Institucional del IPICYT
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.811543

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