Design of graphene electronic devices using nanoribbons of different widths
"We present a simple design of a field effect transistor based on graphene nanoribbons, taking advantage of the metallic and semiconductor nature of nanoribbons with different widths. Such device could be constructed by using lithography techniques. The conductance of the proposed device is obt...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2009 |
| País: | México |
| Institución: | Instituto Potosino de Investigación Científica y Tecnológica |
| Repositorio: | Repositorio Institucional del IPICYT |
| Idioma: | inglés |
| OAI Identifier: | oai:ipicyt.repositorioinstitucional.mx:1010/1114 |
| Acceso en línea: | http://ipicyt.repositorioinstitucional.mx/jspui/handle/1010/1114 |
| Access Level: | acceso abierto |
| Palabra clave: | info:eu-repo/classification/Autor/Electrical resistivity info:eu-repo/classification/Autor/Field effect transistors info:eu-repo/classification/Autor/Graphene info:eu-repo/classification/Autor/Nanolithography info:eu-repo/classification/Autor/Nanostructured materials info:eu-repo/classification/cti/1 info:eu-repo/classification/cti/22 |
| Sumario: | "We present a simple design of a field effect transistor based on graphene nanoribbons, taking advantage of the metallic and semiconductor nature of nanoribbons with different widths. Such device could be constructed by using lithography techniques. The conductance of the proposed device is obtained by using the Kubo formula, assuming a strong damping due to the substrate and imperfections of the lattice. By removing the control electrodes, the design could also be used as an electrical resistance." |
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