Quantum confinement and crystalline structure of CdSe nanocrystalline films
Nanocrystalline CdSe films were grown onto glass substrates by the chemical bath method. Different constant deposition temperatures (Td) were employed in the range 4-65 degreesC. Average grain size (GS) increased monotonically with Td, reaching saturation at similar to 65 degreesC. The GS values wer...
| Autores: | , , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2001 |
| País: | México |
| Institución: | Universidad Nacional Autónoma de México |
| Repositorio: | Sistema de Información de la Facultad de Ciencias, UNAM |
| OAI Identifier: | oai:repositorio.fciencias.unam.mx:11154/1912 |
| Acceso en línea: | http://hdl.handle.net/11154/1912 |
| Access Level: | acceso abierto |
| Palabra clave: | Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter |
| Sumario: | Nanocrystalline CdSe films were grown onto glass substrates by the chemical bath method. Different constant deposition temperatures (Td) were employed in the range 4-65 degreesC. Average grain size (GS) increased monotonically with Td, reaching saturation at similar to 65 degreesC. The GS values were in the interval 5-16 nm. At low T-d values (4-15 degreesC) the structural phase was hexagonal wurtzite (W). for intermediate values. a wurtzite and zincblende (ZB) mixture of phases was found, and at high T-d (65 degreesC) only cubic ZB phase was present in the layers. The variation of the bandgap as a result of the structural phase change and quantum confinement is studied. |
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