Infrared and Raman characterization of amorphous carbon nitride thin films prepared by laser ablation
Infrared and Raman spectroscopies have been used to characterize the presence of sp2 and sp3 bonds in carbon nitride films providing some information about the sp2/sp3 ratio. The Raman results revealed that the increase in size or number of sp2 clusters is the result of two processes, which include...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2005 |
| País: | México |
| Institución: | Universidad Autónoma del Estado de México |
| Repositorio: | Redalyc-UAEMEX |
| OAI Identifier: | oai:redalyc.org:94218303 |
| Acceso en línea: | https://www.redalyc.org/articulo.oa?id=94218303 |
| Access Level: | acceso abierto |
| Palabra clave: | Física, Astronomía y Matemáticas Laser ablation Carbon nitride Raman spectroscopy Infrared spectroscopy |
| Sumario: | Infrared and Raman spectroscopies have been used to characterize the presence of sp2 and sp3 bonds in carbon nitride films providing some information about the sp2/sp3 ratio. The Raman results revealed that the increase in size or number of sp2 clusters is the result of two processes, which include the increase of nitrogen content and particle bombardment, so that under certain experimental conditions a film with practically the same composition but different microstructure can be obtained. IR results reveal the presence of carbon-carbon, carbon-nitrogen, carbon-oxygen and carbon-hydrogen bonding, and their intensities depend on the laser fluence used for deposition. |
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