Prediction of silicon dry etching using a piecewise linear algorithm
A piecewise linear algorithm for predicting silicon etch rates in fluorine-based plasmas is shown. Discrete experimental data of pressure and RF power in reactive ion etching are used to construct a set of local two-dimensional etching functions that serve as a basis for computing numerical solution...
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2013 |
| País: | México |
| Institución: | Instituto Nacional de Astrofísica, Óptica y Electrónica |
| Repositorio: | Repositorio Institucional del INAOE |
| Idioma: | inglés |
| OAI Identifier: | oai:inaoe.repositorioinstitucional.mx:1009/2354 |
| Acceso en línea: | http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/2354 |
| Access Level: | acceso abierto |
| Palabra clave: | info:eu-repo/classification/Inspec/Silicon etching info:eu-repo/classification/Inspec/Piecewise linear info:eu-repo/classification/Inspec/Algorithm info:eu-repo/classification/cti/1 info:eu-repo/classification/cti/22 info:eu-repo/classification/cti/2203 |
| Sumario: | A piecewise linear algorithm for predicting silicon etch rates in fluorine-based plasmas is shown. Discrete experimental data of pressure and RF power in reactive ion etching are used to construct a set of local two-dimensional etching functions that serve as a basis for computing numerical solutions (pressure and power values for a specific predicted silicon etch rate). It must be pointed out that, although the algorithm scans the entire data domain, a testing procedure is applied to ensure that the computing task will be invoked only when a solution exists, and otherwise it will be discarded (this avoids brute force methods). In the last step of the algorithm, all solutions are collected and interpolated to construct a solution path. In order to verify the match between the experimental etching results and numerical predictions, the algorithm has been coded and tested using Maple® Release 13.0, showing a successful validation with a difference between experimental data and computed numerical solutions as low as 1% for SF₆, and 4% for SF₆/O₂ in the best case and a root-mean squared error of 0.03. |
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