Thermo-sensing silicon–germanium–boron films prepared by plasma for un-cooled micro-bolometers
In this work we report a study of silicon–germanium–boron alloys (a-SixGeyBz:H) deposited by low frequency plasma enhanced chemical vapor deposition (LF PECVD) at relatively low temperatures, which are compatible with the IC silicon technology for applications as low resistance thermo-sensing films...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2008 |
| País: | México |
| Institución: | Instituto Nacional de Astrofísica, Óptica y Electrónica |
| Repositorio: | Repositorio Institucional del INAOE |
| Idioma: | inglés |
| OAI Identifier: | oai:inaoe.repositorioinstitucional.mx:1009/1101 |
| Acceso en línea: | http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1101 |
| Access Level: | acceso abierto |
| Palabra clave: | info:eu-repo/classification/Amorphous semiconductors/Amorphous semiconductors info:eu-repo/classification/Germanium/Germanium info:eu-repo/classification/Silicon/Silicon info:eu-repo/classification/Conductivity/Conductivity info:eu-repo/classification/Plasma deposition/Plasma deposition info:eu-repo/classification/cti/1 info:eu-repo/classification/cti/22 info:eu-repo/classification/cti/2203 |
| Sumario: | In this work we report a study of silicon–germanium–boron alloys (a-SixGeyBz:H) deposited by low frequency plasma enhanced chemical vapor deposition (LF PECVD) at relatively low temperatures, which are compatible with the IC silicon technology for applications as low resistance thermo-sensing films in micro-bolometers. Three values of germanium gas content (Gey) were used during the film deposition, Gey = 0.3, 0.45 and 0.55. Deposition and film properties were compared with a reference intrinsic film (a-SixGey:H) in order to study the Gey effect on the temperature dependence of conductivity (δ(T)) and specifically on the activation energy (Ea). We observed a variation on the activation energy from Ea = 0.34 eV to Ea = 0.18 eV and on the room temperature conductivity from δ RT = 6 X 10-5 (Ω cm)-1 to δ RT = 2.5 X 10-2 (Ω cm)-1, for the reference intrinsic film and for the boron alloy with Gey = 0.55, respectively. The solid phase composition of the films was characterized by SIMS measurements. The effect of patterning the films (µ m scale) with photolithography and the deposition on a SiNx micro-bridge on the film electrical properties was also studied. |
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