Topographic analysis of silicon nanoparticles-based electroluminescent devices

Electroluminescent properties of silicon nanoparticles embedded in MOS devices have been studied. Silicon rich oxide (SRO) films with 4 at.% of silicon excess were used as active layers. Intense and stable light emission is observed with the naked eye as shining spots at the surface of devices. AFM...

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Detalles Bibliográficos
Autores: ALFREDO MORALES SANCHEZ, MARIANO ACEVES MIJARES, JORGE MIGUEL PEDRAZA CHAVEZ
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2010
País:México
Institución:Instituto Nacional de Astrofísica, Óptica y Electrónica
Repositorio:Repositorio Institucional del INAOE
Idioma:inglés
OAI Identifier:oai:inaoe.repositorioinstitucional.mx:1009/1437
Acceso en línea:http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1437
Access Level:acceso abierto
Palabra clave:info:eu-repo/classification/Silicon rich oxide/Silicon rich oxide
info:eu-repo/classification/Silicon nanoparticles/Silicon nanoparticles
info:eu-repo/classification/Metal-oxide semiconductor/Metal-oxide semiconductor
info:eu-repo/classification/Conductive paths/Conductive paths
info:eu-repo/classification/Electroluminescence/Electroluminescence
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2203
id MX_9aaeccbe36e2ef2d6f1b65ec0d117d59
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spelling Topographic analysis of silicon nanoparticles-based electroluminescent devicesALFREDO MORALES SANCHEZMARIANO ACEVES MIJARESJORGE MIGUEL PEDRAZA CHAVEZinfo:eu-repo/classification/Silicon rich oxide/Silicon rich oxideinfo:eu-repo/classification/Silicon nanoparticles/Silicon nanoparticlesinfo:eu-repo/classification/Metal-oxide semiconductor/Metal-oxide semiconductorinfo:eu-repo/classification/Conductive paths/Conductive pathsinfo:eu-repo/classification/Electroluminescence/Electroluminescenceinfo:eu-repo/classification/cti/1info:eu-repo/classification/cti/22info:eu-repo/classification/cti/2203info:eu-repo/classification/cti/2203Electroluminescent properties of silicon nanoparticles embedded in MOS devices have been studied. Silicon rich oxide (SRO) films with 4 at.% of silicon excess were used as active layers. Intense and stable light emission is observed with the naked eye as shining spots at the surface of devices. AFM measurements on these devices exhibit a remarkably granular surface where the EL spots are observed. The EL measurements show a broad visible spectrum with various peaks between 420 and 870 nm. These EL spots are related with charge injection through conductive paths created by adjacent Si-nps within the SRO.Elsevier B.V.2010info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersionapplication/pdfhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1437reponame:Repositorio Institucional del INAOEinstname:Instituto Nacional de Astrofísica, Óptica y Electrónicainstacron:INAOEengcitation:Morales-Sánchez, A., et al., (2010). Topographic analysis of silicon nanoparticles-based electroluminescent devices, Materials Science and Engineering B (174): 123–126info:eu-repo/semantics/openAccesshttp://creativecommons.org/licenses/by-nc-nd/4.0oai:inaoe.repositorioinstitucional.mx:1009/14372024-08-28T03:22:56Z
dc.title.none.fl_str_mv Topographic analysis of silicon nanoparticles-based electroluminescent devices
title Topographic analysis of silicon nanoparticles-based electroluminescent devices
spellingShingle Topographic analysis of silicon nanoparticles-based electroluminescent devices
ALFREDO MORALES SANCHEZ
info:eu-repo/classification/Silicon rich oxide/Silicon rich oxide
info:eu-repo/classification/Silicon nanoparticles/Silicon nanoparticles
info:eu-repo/classification/Metal-oxide semiconductor/Metal-oxide semiconductor
info:eu-repo/classification/Conductive paths/Conductive paths
info:eu-repo/classification/Electroluminescence/Electroluminescence
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2203
info:eu-repo/classification/cti/2203
title_short Topographic analysis of silicon nanoparticles-based electroluminescent devices
title_full Topographic analysis of silicon nanoparticles-based electroluminescent devices
title_fullStr Topographic analysis of silicon nanoparticles-based electroluminescent devices
title_full_unstemmed Topographic analysis of silicon nanoparticles-based electroluminescent devices
title_sort Topographic analysis of silicon nanoparticles-based electroluminescent devices
dc.creator.none.fl_str_mv ALFREDO MORALES SANCHEZ
MARIANO ACEVES MIJARES
JORGE MIGUEL PEDRAZA CHAVEZ
author ALFREDO MORALES SANCHEZ
author_facet ALFREDO MORALES SANCHEZ
MARIANO ACEVES MIJARES
JORGE MIGUEL PEDRAZA CHAVEZ
author_role author
author2 MARIANO ACEVES MIJARES
JORGE MIGUEL PEDRAZA CHAVEZ
author2_role author
author
dc.subject.none.fl_str_mv info:eu-repo/classification/Silicon rich oxide/Silicon rich oxide
info:eu-repo/classification/Silicon nanoparticles/Silicon nanoparticles
info:eu-repo/classification/Metal-oxide semiconductor/Metal-oxide semiconductor
info:eu-repo/classification/Conductive paths/Conductive paths
info:eu-repo/classification/Electroluminescence/Electroluminescence
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2203
info:eu-repo/classification/cti/2203
topic info:eu-repo/classification/Silicon rich oxide/Silicon rich oxide
info:eu-repo/classification/Silicon nanoparticles/Silicon nanoparticles
info:eu-repo/classification/Metal-oxide semiconductor/Metal-oxide semiconductor
info:eu-repo/classification/Conductive paths/Conductive paths
info:eu-repo/classification/Electroluminescence/Electroluminescence
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2203
info:eu-repo/classification/cti/2203
description Electroluminescent properties of silicon nanoparticles embedded in MOS devices have been studied. Silicon rich oxide (SRO) films with 4 at.% of silicon excess were used as active layers. Intense and stable light emission is observed with the naked eye as shining spots at the surface of devices. AFM measurements on these devices exhibit a remarkably granular surface where the EL spots are observed. The EL measurements show a broad visible spectrum with various peaks between 420 and 870 nm. These EL spots are related with charge injection through conductive paths created by adjacent Si-nps within the SRO.
publishDate 2010
dc.date.none.fl_str_mv 2010
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1437
url http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1437
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv citation:Morales-Sánchez, A., et al., (2010). Topographic analysis of silicon nanoparticles-based electroluminescent devices, Materials Science and Engineering B (174): 123–126
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0
eu_rights_str_mv openAccess
rights_invalid_str_mv http://creativecommons.org/licenses/by-nc-nd/4.0
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier B.V.
publisher.none.fl_str_mv Elsevier B.V.
dc.source.none.fl_str_mv reponame:Repositorio Institucional del INAOE
instname:Instituto Nacional de Astrofísica, Óptica y Electrónica
instacron:INAOE
instname_str Instituto Nacional de Astrofísica, Óptica y Electrónica
instacron_str INAOE
institution INAOE
reponame_str Repositorio Institucional del INAOE
collection Repositorio Institucional del INAOE
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.811543

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