Topographic analysis of silicon nanoparticles-based electroluminescent devices
Electroluminescent properties of silicon nanoparticles embedded in MOS devices have been studied. Silicon rich oxide (SRO) films with 4 at.% of silicon excess were used as active layers. Intense and stable light emission is observed with the naked eye as shining spots at the surface of devices. AFM...
| Autores: | , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2010 |
| País: | México |
| Institución: | Instituto Nacional de Astrofísica, Óptica y Electrónica |
| Repositorio: | Repositorio Institucional del INAOE |
| Idioma: | inglés |
| OAI Identifier: | oai:inaoe.repositorioinstitucional.mx:1009/1437 |
| Acceso en línea: | http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1437 |
| Access Level: | acceso abierto |
| Palabra clave: | info:eu-repo/classification/Silicon rich oxide/Silicon rich oxide info:eu-repo/classification/Silicon nanoparticles/Silicon nanoparticles info:eu-repo/classification/Metal-oxide semiconductor/Metal-oxide semiconductor info:eu-repo/classification/Conductive paths/Conductive paths info:eu-repo/classification/Electroluminescence/Electroluminescence info:eu-repo/classification/cti/1 info:eu-repo/classification/cti/22 info:eu-repo/classification/cti/2203 |
| Sumario: | Electroluminescent properties of silicon nanoparticles embedded in MOS devices have been studied. Silicon rich oxide (SRO) films with 4 at.% of silicon excess were used as active layers. Intense and stable light emission is observed with the naked eye as shining spots at the surface of devices. AFM measurements on these devices exhibit a remarkably granular surface where the EL spots are observed. The EL measurements show a broad visible spectrum with various peaks between 420 and 870 nm. These EL spots are related with charge injection through conductive paths created by adjacent Si-nps within the SRO. |
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