New Physical Interpretation of Thermoelectric Cooling in Semiconductor Structures
Nontraditional approach to explain the thermoelectric cooling is suggested . It is based on the Le Chatelier-Braun thermodynamic principle. New effect of cooling and heating of junction of two materials (barrierlessthermoelectric cooling) is theoretically predicted, and this effect is different from...
| Autores: | , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2006 |
| País: | México |
| Institución: | Instituto Politécnico Nacional |
| Repositorio: | Redalyc-IPN |
| OAI Identifier: | oai:redalyc.org:46436541 |
| Acceso en línea: | https://www.redalyc.org/articulo.oa?id=46436541 |
| Access Level: | acceso abierto |
| Palabra clave: | Física, Astronomía y Matemáticas Thermoelectricity Thermoelectric cooling |
| Sumario: | Nontraditional approach to explain the thermoelectric cooling is suggested . It is based on the Le Chatelier-Braun thermodynamic principle. New effect of cooling and heating of junction of two materials (barrierlessthermoelectric cooling) is theoretically predicted, and this effect is different from the Peltier effect (barrierthermoelectric cooling). The suggested thermoelectric effect must be displayed always at the finite values ofthe junction surface heat conductivity h. Barrierless thermoelectric effect occurs even in the case when theconducting materials are identical with the same Peltier coefficients. It is shown that both barrier and barrierlessthermoelectric cooling effects always exist simultaneously in the general case. The reasons proving reversibilityof the thermoelectric cooling process are resulted. |
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