A simple Al/SRO/Si structure with silicon nanoparticles as a UV and Vis photodetector
A photodetector that shows high photocurrent in the ultraviolet and visible wavelengths has been fabricated. The device consists of a metal-oxide-semiconductor (MOS)-like grid structure where the dielectric layer is a silicon-rich oxide (SRO) film. Its fabrication is completely compatible with silic...
| Autores: | , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2009 |
| País: | México |
| Institución: | Instituto Nacional de Astrofísica, Óptica y Electrónica |
| Repositorio: | Repositorio Institucional del INAOE |
| Idioma: | inglés |
| OAI Identifier: | oai:inaoe.repositorioinstitucional.mx:1009/1226 |
| Acceso en línea: | http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1226 |
| Access Level: | acceso abierto |
| Palabra clave: | info:eu-repo/classification/Photodetector/Photodetector info:eu-repo/classification/Silicon rich oxide/Silicon rich oxide info:eu-repo/classification/Photocurrent/Photocurrent info:eu-repo/classification/Silicon nanoparticles/Silicon nanoparticles info:eu-repo/classification/Electrical properties/Electrical properties info:eu-repo/classification/cti/1 info:eu-repo/classification/cti/22 info:eu-repo/classification/cti/2203 |
| Sumario: | A photodetector that shows high photocurrent in the ultraviolet and visible wavelengths has been fabricated. The device consists of a metal-oxide-semiconductor (MOS)-like grid structure where the dielectric layer is a silicon-rich oxide (SRO) film. Its fabrication is completely compatible with silicon technology. SRO thin films with 1 to 12% silicon excess were deposited on silicon wafers by low pressure chemical vapour deposition technique. After thermal annealing, silicon nanoagglomerates were created. Current-voltage measurements in dark and under illumination conditions were done to test the devices. |
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