Low interface states and high dielectric constant Y2O3 films on Si substrates
Y2O3 films were deposited on c-Si substrates at temperatures in the 400–550 °C range, with no further thermal treatment given to these samples, using the spray pyrolysis technique. The spraying solution was yttrium acetilacetonate disolved N,N-dimethylformamide. In addition, a solution of H2O–NH4OH...
| Autores: | , , , , |
|---|---|
| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2006 |
| País: | México |
| Institución: | Instituto Politécnico Nacional |
| Repositorio: | Repositorio Digital del IPN |
| OAI Identifier: | oai:www.repositoriodigital.ipn.mx:123456789/11633 |
| Acceso en línea: | http://hdl.handle.net/123456789/1159 http://www.repositoriodigital.ipn.mx/handle/123456789/11633 |
| Access Level: | acceso abierto |
| Palabra clave: | Y2O3 THIN FILMS SPRAY PYROLYSIS |
| Sumario: | Y2O3 films were deposited on c-Si substrates at temperatures in the 400–550 °C range, with no further thermal treatment given to these samples, using the spray pyrolysis technique. The spraying solution was yttrium acetilacetonate disolved N,N-dimethylformamide. In addition, a solution of H2O–NH4OH was sprayed in parallel during the deposition process to improve the optical, structural, and electrical properties of the deposited films. The growth of a SiO2 layer between the yttrium oxide and the Si substrate during this deposition process resulted in interface state density values as low as 1010 eV−1 cm−2. An effective refractive index value of 1.86, and deposition rates close to 1 Å/ s were obtained. The Y2O3 films were polycrystalline with a crystalline cubic phase highly textured with the 400 direction normal to the Si surface. An effective dielectric constant up to 13, as well as a dielectric strength of the order of 0.2 MV/cm was obtained for 1000 Å thick as-deposited films incorporated in a metal-oxide-semiconductor structure. |
|---|