MOCVD GaInP heterojunction bipolar transistor current gain stability
The evolution of the GaInP/GaAs hetero-junction bipolar transistor currents during the burn-in process is studied. We found that during the burn-in process all the diffusion currents decrease as a function of the stressing time. The simultaneously observed current gain increase is produced by a mo...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2001 |
| País: | México |
| Institución: | Centro de Investigación y de Estudios Avanzados del IPN |
| Repositorio: | Redalyc-CINVESTAV |
| OAI Identifier: | oai:redalyc.org:94201314 |
| Acceso en línea: | https://www.redalyc.org/articulo.oa?id=94201314 |
| Access Level: | acceso abierto |
| Palabra clave: | Física, Astronomía y Matemáticas in Burn GaInP Transistor Heterojunction |
| Sumario: | The evolution of the GaInP/GaAs hetero-junction bipolar transistor currents during the burn-in process is studied. We found that during the burn-in process all the diffusion currents decrease as a function of the stressing time. The simultaneously observed current gain increase is produced by a more important reduction on the hole current injected into the emitter. Such behavior can be explained by an empirical model that considers impurity reactivation at both sides of the emitter-base junction. Thus, to suppress the burn-in process the whole structure device should be hydrogen free. |
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