Synthesis of switched current memory cells using the nullor approach and application to the design of high performance SI sigma delta modulators

This work presents the design of switched current sigma delta modulators. The nullor approach is adopted to synthesize voltage followers used to design translinear-loop-based switched current memory cells. Besides, it is proposed an approach for computing optimal biases and sizing of transistors for...

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Detalles Bibliográficos
Autor: ESTEBAN TLELO CUAUTLE
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2008
País:México
Institución:Instituto Nacional de Astrofísica, Óptica y Electrónica
Repositorio:Repositorio Institucional del INAOE
Idioma:inglés
OAI Identifier:oai:inaoe.repositorioinstitucional.mx:1009/1107
Acceso en línea:http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1107
Access Level:acceso abierto
Palabra clave:info:eu-repo/classification/Switched current technique/Switched current technique
info:eu-repo/classification/Voltage follower/Voltage follower
info:eu-repo/classification/Nullor/Nullor
info:eu-repo/classification/Heuristic/Heuristic
info:eu-repo/classification/Sigma Delta Modulator/Sigma Delta Modulator
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2203
Descripción
Sumario:This work presents the design of switched current sigma delta modulators. The nullor approach is adopted to synthesize voltage followers used to design translinear-loop-based switched current memory cells. Besides, it is proposed an approach for computing optimal biases and sizing of transistors forming the modulator. This heuristic allowed us sampling a second order modulator up to 80MHz, ensuring more than 60dB of SNR.