Raman scattering study of photoluminescent spark-processed porous InP

Article

Detalhes bibliográficos
Autor: ROJAS LÓPEZ, MARLON
Formato: artículo
Estado:Versión publicada
Fecha de publicación:2012
País:México
Recursos:Instituto Politécnico Nacional
Repositorio:Repositorio Digital del IPN
OAI Identifier:oai:www.repositoriodigital.ipn.mx:123456789/8558
Acesso em linha:http://www.repositoriodigital.ipn.mx/handle/123456789/8558
Access Level:acceso abierto
Palavra-chave:Raman scattering
Indium phosphide
Oxidation;
Semiconductors
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spelling Raman scattering study of photoluminescent spark-processed porous InPROJAS LÓPEZ, MARLONRaman scatteringIndium phosphideOxidation;SemiconductorsArticleRaman scattering has been used to study porous InP 001. samples prepared by the application of high voltage spark discharges in air and argon atmospheres. For photoluminescent material, Raman scattering as well as Normaski microscopy of a transversally cut sample, 011. face, show the existence of two very distinct zones, that lie at different depths: a superficial luminescent region constituted mostly by In2O3 and InPO4 oxides, and a second adjacent deeper zone formed by damaged InP. These results highlight the role that the oxidation plays in this material as source of the visible luminescence that the material emits when excited with UV radiation. The deepest region shows InP-like vibrational behavior with broad longitudinal optical LO. and transversal optical TO. phonon bands. A fit of the observed lineshapes of the TO and LO modes using the spatial correlation model provides an estimate of the size of the crystalline regions L;30 A°.. Q 2000 Elsevier Science B.V. All rights reserved.Instituto Politécnico Nacional CIBA-TlaxcalaMedico-Biológicaspdf2012-11-26T21:24:36Z2012-11-26T21:24:36Z2012-11-26info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttp://www.repositoriodigital.ipn.mx/handle/123456789/8558reponame:Repositorio Digital del IPNinstname:Instituto Politécnico Nacionalinstacron:IPNeninfo:eu-repo/semantics/openAccessoai:www.repositoriodigital.ipn.mx:123456789/85582026-02-18T16:39:56Z
dc.title.none.fl_str_mv Raman scattering study of photoluminescent spark-processed porous InP
title Raman scattering study of photoluminescent spark-processed porous InP
spellingShingle Raman scattering study of photoluminescent spark-processed porous InP
ROJAS LÓPEZ, MARLON
Raman scattering
Indium phosphide
Oxidation;
Semiconductors
title_short Raman scattering study of photoluminescent spark-processed porous InP
title_full Raman scattering study of photoluminescent spark-processed porous InP
title_fullStr Raman scattering study of photoluminescent spark-processed porous InP
title_full_unstemmed Raman scattering study of photoluminescent spark-processed porous InP
title_sort Raman scattering study of photoluminescent spark-processed porous InP
dc.creator.none.fl_str_mv ROJAS LÓPEZ, MARLON
author ROJAS LÓPEZ, MARLON
author_facet ROJAS LÓPEZ, MARLON
author_role author
dc.subject.none.fl_str_mv Raman scattering
Indium phosphide
Oxidation;
Semiconductors
topic Raman scattering
Indium phosphide
Oxidation;
Semiconductors
description Article
publishDate 2012
dc.date.none.fl_str_mv 2012-11-26T21:24:36Z
2012-11-26T21:24:36Z
2012-11-26
dc.type.none.fl_str_mv info:eu-repo/semantics/publishedVersion
info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://www.repositoriodigital.ipn.mx/handle/123456789/8558
url http://www.repositoriodigital.ipn.mx/handle/123456789/8558
dc.language.none.fl_str_mv en
language_invalid_str_mv en
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.none.fl_str_mv reponame:Repositorio Digital del IPN
instname:Instituto Politécnico Nacional
instacron:IPN
instname_str Instituto Politécnico Nacional
instacron_str IPN
institution IPN
reponame_str Repositorio Digital del IPN
collection Repositorio Digital del IPN
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,808905

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