Cálculo de la corriente de tuneleo y el efecto de la temperatura usando la ecuación de Schrodinger.
The calculation of quantum-mechanical tunneling, through the gate oxide, in a Metal-Oxide-Field-Effect Transistor (MOSFET), is introduced in this thesis. The calculation includes a detailed analysis of gate-oxide tunneling based on fundamental theory taking into account the Schrodinger equation, and...
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| Tipo de recurso: | tesis de maestría |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2017 |
| País: | México |
| Institución: | Instituto Nacional de Astrofísica, Óptica y Electrónica |
| Repositorio: | Repositorio Institucional del INAOE |
| Idioma: | español |
| OAI Identifier: | oai:inaoe.repositorioinstitucional.mx:1009/814 |
| Acceso en línea: | http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/814 |
| Access Level: | acceso abierto |
| Palabra clave: | info:eu-repo/classification/Túneles/Tunneling info:eu-repo/classification/Schrodinger/Schrodinger info:eu-repo/classification/Corriente/Current info:eu-repo/classification/Temperatura/Temperature info:eu-repo/classification/cti/1 info:eu-repo/classification/cti/22 info:eu-repo/classification/cti/2203 info:eu-repo/classification/cti/330793 |
| Sumario: | The calculation of quantum-mechanical tunneling, through the gate oxide, in a Metal-Oxide-Field-Effect Transistor (MOSFET), is introduced in this thesis. The calculation includes a detailed analysis of gate-oxide tunneling based on fundamental theory taking into account the Schrodinger equation, and some numerical methods to solve the equation and calculate the tunneling transmission rate. The particle-independent tunneling current is also described, which explains some phenomena that influence the calculation of the tunneling current itself; these phenomena are the space-charge effect, and the E-k relationship. The tunneling mechanism for different gate-oxide types, and its influence on the gate oxide tunneling current, is also described in chapter 4. The tunneling current for oxide materials, such as SiO2 or HfO2, in the 1-2 nm thickness range, in MOSFETs is also introduced. The effect of temperature on the quantum mechanical tunneling mechanisms, as well as on the fate oxide current itself, is shown in chapter 5. Finally, some conclusions and comments on the quantum mechanical tunneling mechanisms, and its deleterious effect on MOSFETs, are addressed. |
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