Using S-parameter measurements to determine the threshold voltage, gain factor, and mobility degradation factor for microwave bulk-MOSFETs

In this paper, we present an extraction and characterization methodology which allows for the determination, from S-parameter measurements, of the threshold voltage, the gain factor, and the mobility degradation factor, neither requiring data regressions involving multiple devices nor DC measurement...

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Detalles Bibliográficos
Autores: GERMAN ANDRES ALVAREZ BOTERO, REYDEZEL TORRES TORRES, ROBERTO STACK MURPHY ARTEAGA
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2010
País:México
Institución:Instituto Nacional de Astrofísica, Óptica y Electrónica
Repositorio:Repositorio Institucional del INAOE
Idioma:inglés
OAI Identifier:oai:inaoe.repositorioinstitucional.mx:1009/1493
Acceso en línea:http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1493
Access Level:acceso abierto
Palabra clave:info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2203
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spelling Using S-parameter measurements to determine the threshold voltage, gain factor, and mobility degradation factor for microwave bulk-MOSFETsGERMAN ANDRES ALVAREZ BOTEROREYDEZEL TORRES TORRESROBERTO STACK MURPHY ARTEAGAinfo:eu-repo/classification/cti/1info:eu-repo/classification/cti/22info:eu-repo/classification/cti/2203info:eu-repo/classification/cti/2203In this paper, we present an extraction and characterization methodology which allows for the determination, from S-parameter measurements, of the threshold voltage, the gain factor, and the mobility degradation factor, neither requiring data regressions involving multiple devices nor DC measurements. This methodology takes into account the substrate effects occurring in MOSFETs built in bulk technology so that physically meaningful parameters can be obtained. Furthermore, an analysis of the substrate impedance is presented, showing that this parasitic component not only degrades the performance of a microwave MOSFET, but may also lead to determining unrealistic values for the model parameters when not considered during a high-frequency characterization process. Measurements were made on transistors of different lengths, the shortest being 80 nm, in the 10 MHz to 40 GHz frequency range.Elsevier Ltd2010info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersionapplication/pdfhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1493reponame:Repositorio Institucional del INAOEinstname:Instituto Nacional de Astrofísica, Óptica y Electrónicainstacron:INAOEengcitation:Álvarez-Botero, G., et al., (2010). Using S-parameter measurements to determine the threshold voltage, gain factor, and mobility degradation factor for microwave bulk-MOSFETs, Microelectronics Reliability, (51): 342–349info:eu-repo/semantics/openAccesshttp://creativecommons.org/licenses/by-nc-nd/4.0oai:inaoe.repositorioinstitucional.mx:1009/14932024-08-28T03:22:56Z
dc.title.none.fl_str_mv Using S-parameter measurements to determine the threshold voltage, gain factor, and mobility degradation factor for microwave bulk-MOSFETs
title Using S-parameter measurements to determine the threshold voltage, gain factor, and mobility degradation factor for microwave bulk-MOSFETs
spellingShingle Using S-parameter measurements to determine the threshold voltage, gain factor, and mobility degradation factor for microwave bulk-MOSFETs
GERMAN ANDRES ALVAREZ BOTERO
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2203
info:eu-repo/classification/cti/2203
title_short Using S-parameter measurements to determine the threshold voltage, gain factor, and mobility degradation factor for microwave bulk-MOSFETs
title_full Using S-parameter measurements to determine the threshold voltage, gain factor, and mobility degradation factor for microwave bulk-MOSFETs
title_fullStr Using S-parameter measurements to determine the threshold voltage, gain factor, and mobility degradation factor for microwave bulk-MOSFETs
title_full_unstemmed Using S-parameter measurements to determine the threshold voltage, gain factor, and mobility degradation factor for microwave bulk-MOSFETs
title_sort Using S-parameter measurements to determine the threshold voltage, gain factor, and mobility degradation factor for microwave bulk-MOSFETs
dc.creator.none.fl_str_mv GERMAN ANDRES ALVAREZ BOTERO
REYDEZEL TORRES TORRES
ROBERTO STACK MURPHY ARTEAGA
author GERMAN ANDRES ALVAREZ BOTERO
author_facet GERMAN ANDRES ALVAREZ BOTERO
REYDEZEL TORRES TORRES
ROBERTO STACK MURPHY ARTEAGA
author_role author
author2 REYDEZEL TORRES TORRES
ROBERTO STACK MURPHY ARTEAGA
author2_role author
author
dc.subject.none.fl_str_mv info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2203
info:eu-repo/classification/cti/2203
topic info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2203
info:eu-repo/classification/cti/2203
description In this paper, we present an extraction and characterization methodology which allows for the determination, from S-parameter measurements, of the threshold voltage, the gain factor, and the mobility degradation factor, neither requiring data regressions involving multiple devices nor DC measurements. This methodology takes into account the substrate effects occurring in MOSFETs built in bulk technology so that physically meaningful parameters can be obtained. Furthermore, an analysis of the substrate impedance is presented, showing that this parasitic component not only degrades the performance of a microwave MOSFET, but may also lead to determining unrealistic values for the model parameters when not considered during a high-frequency characterization process. Measurements were made on transistors of different lengths, the shortest being 80 nm, in the 10 MHz to 40 GHz frequency range.
publishDate 2010
dc.date.none.fl_str_mv 2010
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1493
url http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1493
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv citation:Álvarez-Botero, G., et al., (2010). Using S-parameter measurements to determine the threshold voltage, gain factor, and mobility degradation factor for microwave bulk-MOSFETs, Microelectronics Reliability, (51): 342–349
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/4.0
eu_rights_str_mv openAccess
rights_invalid_str_mv http://creativecommons.org/licenses/by-nc-nd/4.0
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier Ltd
publisher.none.fl_str_mv Elsevier Ltd
dc.source.none.fl_str_mv reponame:Repositorio Institucional del INAOE
instname:Instituto Nacional de Astrofísica, Óptica y Electrónica
instacron:INAOE
instname_str Instituto Nacional de Astrofísica, Óptica y Electrónica
instacron_str INAOE
institution INAOE
reponame_str Repositorio Institucional del INAOE
collection Repositorio Institucional del INAOE
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.812429

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