Nanopartículas de HfO2 embebidas en una matriz de óxido spin-on-glass como capa de atrapamiento de carga para dispositivos de memoria
The technological progress and the scaling down of electronic devices have carried out to new research in nonvolatile memory industry. The typical silicon-oxide-nitride-oxide-silicon (SONOS) charge trapping-based nonvolatile memories have been widely studied in past years. The main problem of SONOS...
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| Tipo de recurso: | tesis de maestría |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2012 |
| País: | México |
| Institución: | Instituto Nacional de Astrofísica, Óptica y Electrónica |
| Repositorio: | Repositorio Institucional del INAOE |
| Idioma: | español |
| OAI Identifier: | oai:inaoe.repositorioinstitucional.mx:1009/766 |
| Acceso en línea: | http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/766 |
| Access Level: | acceso abierto |
| Palabra clave: | info:eu-repo/classification/Nanopartículas/Nanoparticles info:eu-repo/classification/Películas delgadas/High-k dielectric thin films info:eu-repo/classification/Almacenamiento de semiconductores/Semiconductor storage info:eu-repo/classification/cti/1 info:eu-repo/classification/cti/22 info:eu-repo/classification/cti/2203 |
| Sumario: | The technological progress and the scaling down of electronic devices have carried out to new research in nonvolatile memory industry. The typical silicon-oxide-nitride-oxide-silicon (SONOS) charge trapping-based nonvolatile memories have been widely studied in past years. The main problem of SONOS devices is the high leakage current due to scaling down of ONO layers. There are a wide variety of films with higher dielectric constant values (κ) other than SiO2 which seems to solve the leakage current problem. At this time, interest is centered on films such as HfO2 with κ value of 25 which appears to be a promising candidate to replace Si3N4 films as the charge trapping layer of SONOS-type memory devices. These high-κ materials lead to a new type of memory structure Metal/Oxide/High-κ oxide/Oxide/Silicon (MOHOS) memory. In this thesis we present the use of HfO2 nanoparticles (np-HfO2) embedded in a spin-on glass oxide matrix as an active charge trapping layer for MOHOS-type memory structures. The deposition of charge-trapping layer is performed by the sol-gel technique and it is characterized at different np-HfO2 concentrations. Fourier Transform Infrared Spectroscopy (FTIR) in absorbance mode is used to observe the presence of chemical bonding presented in the high-κ layer. Also, different annealing temperatures are experimented for final curing of this film. The top oxide of the structure is also deposited by the sol-gel method. For this layer, the same spin-on glass that was used for embedding np-HfO2 is used. For these reasons, the MOHOStype structure is obtained by a very simple and low-cost deposition method. Finally, figures of merit like programming (writing/erasing) times and retention time are presented and correlated to obtain the general performance of the MOHOS-type memory devices. |
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