Reliability characteristics of W-La2O3 structures compared with those of HfO2-based gate oxides
In this paper, we report and compare the reliability results obtained for W-La 2 O 3 gated Metal-Oxide-Semiconductor (MOS) devices with those of HfO 2-based systems reported in literature. Reliability issues like stress-induced leakage current (SILC), interface-states generation (Dit), threshold vol...
| Authors: | , , |
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| Format: | article |
| Status: | Versión aceptada para publicación |
| Publication Date: | 2008 |
| Country: | México |
| Institution: | Instituto Nacional de Astrofísica, Óptica y Electrónica |
| Repository: | Repositorio Institucional del INAOE |
| Language: | English |
| OAI Identifier: | oai:inaoe.repositorioinstitucional.mx:1009/1267 |
| Online Access: | http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1267 |
| Access Level: | Open access |
| Keyword: | info:eu-repo/classification/cti/1 info:eu-repo/classification/cti/22 info:eu-repo/classification/cti/2203 |
| Summary: | In this paper, we report and compare the reliability results obtained for W-La 2 O 3 gated Metal-Oxide-Semiconductor (MOS) devices with those of HfO 2-based systems reported in literature. Reliability issues like stress-induced leakage current (SILC), interface-states generation (Dit), threshold voltage shift (ΔVth) and time to breakdown (t bd) were compared and analyzed for both dielectrics in order to obtain a more specific assessment of their resistance to electrical degradation and breakdown. |
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