Fabrication and characterization of ZnO:Zn(n+)/Porous-Silicon/Si(p) heterojunctions for white light emitting diodes
The fabrication and characterization of electroluminescent ZnO:Zn(n+)/Porous Silicon/Si(p) heterojunctions is presented. Highly conductiveZnO films (ZnO:Zn(n+)) were produced by applying a temperature annealing at 400±C by 5 min to the ZnO/Zn/ZnO arrange formed byDC sputtering, and the Porous Silico...
| Autores: | , , , |
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| Formato: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2016 |
| País: | México |
| Recursos: | Instituto Politécnico Nacional |
| Repositorio: | Redalyc-IPN |
| OAI Identifier: | oai:redalyc.org:57042601002 |
| Acesso em linha: | https://www.redalyc.org/articulo.oa?id=57042601002 |
| Access Level: | acceso abierto |
| Palavra-chave: | Física, Astronomía y Matemáticas Porous Silicon porous silicon ZnO:Zn(n+) films |
| Resumo: | The fabrication and characterization of electroluminescent ZnO:Zn(n+)/Porous Silicon/Si(p) heterojunctions is presented. Highly conductiveZnO films (ZnO:Zn(n+)) were produced by applying a temperature annealing at 400±C by 5 min to the ZnO/Zn/ZnO arrange formed byDC sputtering, and the Porous Silicon (PS) films were prepared on p-type (100) Si wafers by anodic etching. The ZnO:Zn(n+)/PS/Si(p)heterojunction is accomplished by applying a brief temperature annealing stage to the entire ZnO/Zn/ZnO/PS/Si structure to preserve thePS luminescent characteristics. The ZnO:Zn(n+) films were characterized by X-ray diffraction and Hall-van der Pauw measurements.The PS and ZnO:Zn(n+) films were also studied by photoluminescence (PL) measurements. The current-voltage characteristics of theheterojunctions showed well defined rectifying behavior with a turn-on voltage of 1.5 V and ideality factor of 5.4. The high ideality factor isexplained by the presence of electron tunneling transport aided by energy levels related to the defects at the heterojunction interface and intothe PS film. The saturation current and the series resistance of the heterostructure were4£10°7A/cm2and 16≠-cm2, respectively. Whitecolor electroluminescence is easily observed at the naked eye when excited with square wave pulses of 8 V and 1 KHz. |
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