GaN growth on (111) Si with very thin amorphous SiN layer by ECR plasma-assisted MBE
We have investigated the structure and quality of GaN films grown on a 2-3 nm thick amorphous SiN layer formed on (111) Si by electron cyclotron resonance plasma-assisted molecular beam epitaxy under various growth conditions by using both conventional and high-resolution transmission electron micro...
| Autores: | , , |
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| Formato: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2001 |
| País: | México |
| Recursos: | Centro de Investigación y de Estudios Avanzados del IPN |
| Repositorio: | Redalyc-CINVESTAV |
| OAI Identifier: | oai:redalyc.org:94201321 |
| Acesso em linha: | https://www.redalyc.org/articulo.oa?id=94201321 |
| Access Level: | acceso abierto |
| Palavra-chave: | Física, Astronomía y Matemáticas Si GaN Molecular beam epitaxy Transmission electron microscopy |
| Resumo: | We have investigated the structure and quality of GaN films grown on a 2-3 nm thick amorphous SiN layer formed on (111) Si by electron cyclotron resonance plasma-assisted molecular beam epitaxy under various growth conditions by using both conventional and high-resolution transmission electron microscopy. It is shown that (0001) hexagonal GaN (-GaN) films are epitaxially grown on the above-mentioned substrates under optimum growth conditions. With the deviation of optimum conditions, GaN films present rough surface and are composed of small grains of an average size of 0.1 µm. Further, for the growth of decreased effective ratio of nitrogen radical molecules in nitrogen gas, the growth of cubic GaN is predominantly detected with -GaN. High density pure-edge threading dislocations observed in -GaN films are considered to be generated due to island-island coalescence at an early stage of growth. |
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