Stochastic resonance effect in binary STDP performed by RRAM devices

The beneficial role of noise in the binary spike time dependent plasticity (STDP) learning rule, when implemented with memristors, is experimentally analyzed. The two memristor conductance states, which emulate the neuron synapse in neuromorphic architectures, can be better distinguished if a gaussi...

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Autores: Salvador Aguilera, Emili|||0000-0002-1613-6784, Rodríguez Martínez, Rosana|||0000-0002-4565-6703, Martin Martinez, Javier|||0000-0001-5938-5898, Crespo Yepes, Albert|||0000-0003-4618-651X, Miranda, E.|||0000-0003-0470-5318, Nafria, Montserrat|||0000-0002-9549-2890, Rubio, Antonio|||0000-0003-1625-1472, Ntinas, Vasileios|||0000-0002-2367-5567, Sirakoulis, Georgios Ch|||0000-0001-8240-484X
Tipo de recurso: capítulo de libro
Fecha de publicación:2022
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:291869
Acceso en línea:https://ddd.uab.cat/record/291869
https://dx.doi.org/urn:doi:10.1109/NANO54668.2022.9928738
Access Level:acceso abierto
Palabra clave:Memristor
Neuromorphic systems
Resistive switching
RRAM
STDP
Stochastic resonance
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spelling Stochastic resonance effect in binary STDP performed by RRAM devicesSalvador Aguilera, Emili|||0000-0002-1613-6784Rodríguez Martínez, Rosana|||0000-0002-4565-6703Martin Martinez, Javier|||0000-0001-5938-5898Crespo Yepes, Albert|||0000-0003-4618-651XMiranda, E.|||0000-0003-0470-5318Nafria, Montserrat|||0000-0002-9549-2890Rubio, Antonio|||0000-0003-1625-1472Ntinas, Vasileios|||0000-0002-2367-5567Sirakoulis, Georgios Ch|||0000-0001-8240-484XMemristorNeuromorphic systemsResistive switchingRRAMSTDPStochastic resonanceThe beneficial role of noise in the binary spike time dependent plasticity (STDP) learning rule, when implemented with memristors, is experimentally analyzed. The two memristor conductance states, which emulate the neuron synapse in neuromorphic architectures, can be better distinguished if a gaussian noise is added to the bias. The addition of noise allows to reach memristor conductances which are proportional to the overlap between pre- and post-synaptic pulses. 22022-01-0120222022-01-01Capítol de llibrehttp://purl.org/coar/resource_type/c_3248AMhttp://purl.org/coar/version/c_ab4af688f83e57aainfo:eu-repo/semantics/bookPartapplication/pdfhttps://ddd.uab.cat/record/291869https://dx.doi.org/urn:doi:10.1109/NANO54668.2022.9928738reponame:Dipòsit Digital de Documents de la UABinstname:Universitat Autònoma de BarcelonaInglésengAgencia Estatal de Investigación https://doi.org/10.13039/501100011033 PID2019-103869RBAgencia Estatal de Investigación https://doi.org/10.13039/501100011033 TEC2017-90969-EXPopen accesshttp://purl.org/coar/access_right/c_abf2Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets.https://rightsstatements.org/vocab/InC/1.0/info:eu-repo/semantics/openAccessoai:ddd.uab.cat:2918692026-06-06T12:50:31Z
dc.title.none.fl_str_mv Stochastic resonance effect in binary STDP performed by RRAM devices
title Stochastic resonance effect in binary STDP performed by RRAM devices
spellingShingle Stochastic resonance effect in binary STDP performed by RRAM devices
Salvador Aguilera, Emili|||0000-0002-1613-6784
Memristor
Neuromorphic systems
Resistive switching
RRAM
STDP
Stochastic resonance
title_short Stochastic resonance effect in binary STDP performed by RRAM devices
title_full Stochastic resonance effect in binary STDP performed by RRAM devices
title_fullStr Stochastic resonance effect in binary STDP performed by RRAM devices
title_full_unstemmed Stochastic resonance effect in binary STDP performed by RRAM devices
title_sort Stochastic resonance effect in binary STDP performed by RRAM devices
dc.creator.none.fl_str_mv Salvador Aguilera, Emili|||0000-0002-1613-6784
Rodríguez Martínez, Rosana|||0000-0002-4565-6703
Martin Martinez, Javier|||0000-0001-5938-5898
Crespo Yepes, Albert|||0000-0003-4618-651X
Miranda, E.|||0000-0003-0470-5318
Nafria, Montserrat|||0000-0002-9549-2890
Rubio, Antonio|||0000-0003-1625-1472
Ntinas, Vasileios|||0000-0002-2367-5567
Sirakoulis, Georgios Ch|||0000-0001-8240-484X
author Salvador Aguilera, Emili|||0000-0002-1613-6784
author_facet Salvador Aguilera, Emili|||0000-0002-1613-6784
Rodríguez Martínez, Rosana|||0000-0002-4565-6703
Martin Martinez, Javier|||0000-0001-5938-5898
Crespo Yepes, Albert|||0000-0003-4618-651X
Miranda, E.|||0000-0003-0470-5318
Nafria, Montserrat|||0000-0002-9549-2890
Rubio, Antonio|||0000-0003-1625-1472
Ntinas, Vasileios|||0000-0002-2367-5567
Sirakoulis, Georgios Ch|||0000-0001-8240-484X
author_role author
author2 Rodríguez Martínez, Rosana|||0000-0002-4565-6703
Martin Martinez, Javier|||0000-0001-5938-5898
Crespo Yepes, Albert|||0000-0003-4618-651X
Miranda, E.|||0000-0003-0470-5318
Nafria, Montserrat|||0000-0002-9549-2890
Rubio, Antonio|||0000-0003-1625-1472
Ntinas, Vasileios|||0000-0002-2367-5567
Sirakoulis, Georgios Ch|||0000-0001-8240-484X
author2_role author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Memristor
Neuromorphic systems
Resistive switching
RRAM
STDP
Stochastic resonance
topic Memristor
Neuromorphic systems
Resistive switching
RRAM
STDP
Stochastic resonance
description The beneficial role of noise in the binary spike time dependent plasticity (STDP) learning rule, when implemented with memristors, is experimentally analyzed. The two memristor conductance states, which emulate the neuron synapse in neuromorphic architectures, can be better distinguished if a gaussian noise is added to the bias. The addition of noise allows to reach memristor conductances which are proportional to the overlap between pre- and post-synaptic pulses.
publishDate 2022
dc.date.none.fl_str_mv 2
2022-01-01
2022
2022-01-01
dc.type.none.fl_str_mv Capítol de llibre
http://purl.org/coar/resource_type/c_3248
AM
http://purl.org/coar/version/c_ab4af688f83e57aa
dc.type.openaire.fl_str_mv info:eu-repo/semantics/bookPart
format bookPart
dc.identifier.none.fl_str_mv https://ddd.uab.cat/record/291869
https://dx.doi.org/urn:doi:10.1109/NANO54668.2022.9928738
url https://ddd.uab.cat/record/291869
https://dx.doi.org/urn:doi:10.1109/NANO54668.2022.9928738
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv Agencia Estatal de Investigación https://doi.org/10.13039/501100011033 PID2019-103869RB
Agencia Estatal de Investigación https://doi.org/10.13039/501100011033 TEC2017-90969-EXP
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://rightsstatements.org/vocab/InC/1.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://rightsstatements.org/vocab/InC/1.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Dipòsit Digital de Documents de la UAB
instname:Universitat Autònoma de Barcelona
instname_str Universitat Autònoma de Barcelona
reponame_str Dipòsit Digital de Documents de la UAB
collection Dipòsit Digital de Documents de la UAB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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