Stochastic resonance in HfO-based memristors: impact of external noise on the binary STDP protocol
This article deals with the stochastic resonance (SR) phenomenon experimentally observed in HfO2-based memristors. The SR impact on the binary spike time-dependent plasticity (STDP) protocol at the device level was investigated. We demonstrate that the two extreme conductance states of the device th...
| Autores: | , , , , , , , |
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| Formato: | artículo |
| Fecha de publicación: | 2024 |
| País: | España |
| Recursos: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/417699 |
| Acesso em linha: | https://hdl.handle.net/2117/417699 https://dx.doi.org/10.1109/TED.2024.3435173 |
| Access Level: | acceso abierto |
| Palavra-chave: | Memristor Resistive random access memory RRAM Spike time-dependent plasticity STDP Stochastic resonance Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics |
| Resumo: | This article deals with the stochastic resonance (SR) phenomenon experimentally observed in HfO2-based memristors. The SR impact on the binary spike time-dependent plasticity (STDP) protocol at the device level was investigated. We demonstrate that the two extreme conductance states of the device that represent the synaptic weights in neuromorphic systems can be better distinguished with the incorporation of Gaussian noise into the bias signal. This technique allows setting the memristor conductance which is directly related to the overlap between the pre- and postsynaptic pulses. The study is reproduced in the LTSPICE simulator using the dynamic memdiode model (DMM) for memristors. |
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